SI1303DL-T1-E3 Allicdata Electronics
Allicdata Part #:

SI1303DL-T1-E3TR-ND

Manufacturer Part#:

SI1303DL-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 670MA SOT323-3
More Detail: P-Channel 20V 670mA (Ta) 290mW (Ta) Surface Mount ...
DataSheet: SI1303DL-T1-E3 datasheetSI1303DL-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 430 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1303DL-T1-E3 is a single N-channel enhancement mode field effect transistor (FET), which is widely used in many electronic devices due to its power efficiency and versatile operating capabilities. This MOSFET is specifically designed for superior performance in low voltage and high power applications, delivering a maximum drain-source voltage of 40V with a maximum drain current of 130mA.

Application Field

The SI1303DL-T1-E3 is extremely versatile and has many applications in both consumer and industrial electronics. It can be used in a variety of applications, such as DC-DC step-up and step-down power converters, DC-AC inverters and audio amplifiers, among other power conversion and conditioning applications. In addition, the SI1303DL-T1-E3 is highly resistant to voltage transients, making it ideal for use in pulse-ratio modulation (PRM) and pulse-width modulation (PWM) circuits. It is also suitable for use in other power control applications, such as linar voltage regulators, load switches, low-side switches, and many more.

Working Principle

The SI1303DL-T1-E3 contains an N-channel MOSFET which operates in an enhancement mode. When the voltage applied to the gate is greater than the threshold voltage, the FET channel is opened and current is allowed to flow through the drain-source path. When the gate voltage is less than the threshold voltage, the channel is closed, and the current is blocked. This can be used to control the flow of current through the device, and can be used in a variety of power control applications.

The SI1303DL-T1-E3 is also highly efficient, with an on-resistance of no more than 8Ω at a gate-source voltage of 4.5V. This allows for a high power efficiency, as the resistance of the device is low enough to allow for a high current flow without excessive power dissipation. The device is also protected against electrostatic discharge (ESD), as it is a highly reliable and durable device.

Overall, the SI1303DL-T1-E3 is a highly versatile single N-channel MOSFET which is designed for use in low voltage and high power applications. It is able to handle high current levels, and is capable of operating in both step-up and step-down configurations. This makes it an ideal choice for many different power control applications, such as DC-DC power converters, audio amplifiers, and many more.

The specific data is subject to PDF, and the above content is for reference

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