SI1307DL-T1-GE3

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The SI1307DL-T1-GE3 is a Single N-Channel Enhancement Mode Field Effect Transistor (FET). It is designed to be used in applications that include low and medium power switching and circuit protection, audio amplifiers and other applications where low on-state resistance is required. The FET features fast switching times and low R_DS(on) values.

The device is capable of withstanding high avalanche and dv/dt levels, making it well suited for applications where shock and vibration might be encountered. The product is a high-performance monolithic device with a low gate-charge and gate charge times values.

The SI1307DL-T1-GE3 is constructed from gallium nitride on silicon (GaN-on-Si) material which makes it a reliable choice for a wide range of applications. When compared to other FETs, the SI1307DL-T1-GE3 has a fast switching speed and a lower on-state resistance. The submicron GaN-on-Si structure makes it suitable for both high voltage and high temperature applications.

The device features a low static drain-source on-state resistance of 8.9mΩ typically, a high drain current rating of 10A and a low gate threshold voltage of 3V max. It is available in a lead (Pb)-free SOT-8W package. The device is capable of withstanding highly capacitive loads, making it suitable for use in high speed switching applications. Its low profile offers the advantage of allowing the device to be placed in tight spaces.

The working principle of the SI1307DL-T1-GE3 is based on the principle of operation of field effect transistors. It is a voltage controlled device. The drain current flowing through a channel can be controlled by a gate voltage applied to the gate terminal. When a positive gate voltage is applied to the device, the gate-induced charge carriers in the channel increases, resulting in an increase of the drain current. Conversely, when a negative gate voltage is applied, the drain current decreases.

At extremely low drain-source voltages, the on-state resistance of the device drops to zero. This is due to the fact that the drain-source voltage drops below the threshold voltage of the device, allowing the drain current to flow without any gate control. The on-state resistance of the device can be controlled by varying the gate-source voltage. As the gate voltage is increased, the on-state resistance increases, eventually saturating at a maximum value.

The SI1307DL-T1-GE3 is ideal for use in low and medium power switching and circuit protection applications. It is an ideal choice for applications where low on-state resistance is required. Due to its wide temperature range and low gate charge, this device can provide reliable operation in hostile environments. The device is also suitable for audio amplifiers and other applications where fast switching is a requirement.

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