| Allicdata Part #: | SI1307DL-T1-E3TR-ND |
| Manufacturer Part#: |
SI1307DL-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 12V 0.85A SOT323-3 |
| More Detail: | P-Channel 12V 850mA (Ta) 290mW (Ta) Surface Mount ... |
| DataSheet: | SI1307DL-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 450mV @ 250µA (Min) |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SC-70-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 290mW (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 290 mOhm @ 1A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 850mA (Ta) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SI1307DL-T1-E3 is a single, high-performance, high-speed MOSFET with low on-state resistance, high gate source reliability, and superior power performance. The device is designed for various applications, such as motor and AC drive control, lighting and entertainment, HVAC and other home applications, and industrial power conversion, to name a few. Although the SI1307DL-T1-E3 has many applications, this article will focus on two common applications and explain the working principle behind them.The first application of the SI1307DL-T1-E3 is power switching. In power switching applications, the MOSFET is used to control the flow of current through an external circuit. The working principle of this application is quite simple. The voltage at the gate of the MOSFET controls the conduction between the source and the drain of the MOSFET. When the voltage at the gate is high, current will flow freely between the source and the drain. When the voltage at the gate is low, current will not be able to flow. By controlling the voltage at the gate of the MOSFET, it is possible to control the current in the external circuit.The second application of the SI1307DL-T1-E3 is as a linear regulator. When used as a linear regulator, the MOSFET can be used to provide a constant voltage supply to a circuit. The device is placed between the main power supply and the circuit, and the gate of the MOSFET is used to control the amount of current that is allowed to pass through. The working principle is that when the voltage at the gate is high, the current flowing through the MOSFET will be greater, and the output voltage will be higher. When the voltage at the gate is low, the current flowing through the MOSFET is lower, and the output voltage is decreased. By varying the voltage at the gate of the MOSFET, it is possible to keep the output voltage at the desired level.In summary, the SI1307DL-T1-E3 is a single, high-performance, high-speed MOSFET with low on-state resistance, high gate source reliability, and superior power performance. The device can be used for various applications, such as power switching and linear regulation. In power switching applications, the voltage at the gate of the MOSFET controls the conduction between the source and the drain of the MOSFET. In linear regulation applications, the MOSFET is placed between the main power supply and a circuit, and the gate voltage is used to control the amount of current that is allowed to pass through. By varying the voltage at the gate of the MOSFET, it is possible to maintain a desired output voltage for the circuit.
The specific data is subject to PDF, and the above content is for reference
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SI1307DL-T1-E3 Datasheet/PDF