Allicdata Part #: | SI1303DL-T1-GE3-ND |
Manufacturer Part#: |
SI1303DL-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 670MA SOT323-3 |
More Detail: | P-Channel 20V 670mA (Ta) 290mW (Ta) Surface Mount ... |
DataSheet: | SI1303DL-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 290mW (Ta) |
FET Feature: | -- |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 2.2nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 670mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
。SI1303DL-T1-GE3 is a single Field Effect Transistor (FET) that is commonly used in electronic applications. It is a high-frequency FET with a wide frequency bandwidth, making it an attractive choice for applications where high frequency and high gain are important. It is also a robust device, with a high tolerance for operating temperature and voltage.
The SI1303DL-T1-GE3 is based on Silicon-based MOSFET technology. MOSFETs are field-effect transistors that use a thin layer of semiconductor material to control a current flowing across its terminals. They are often used as switches or amplifiers in electronic circuits, as they offer high gain, low capacitance, and low power consumption.
This device uses two separate channels (an N-Channel and a P-Channel) that are connected in opposite directions, forming a symmetrical complementary device. The N-Channel is used to control the current flow, while the P-Channel is used to provide the voltage that is required to control the current flow. The device has an added benefit of being able to operate over a wide range of temperatures and voltages.
The SI1303DL-T1-GE3 is commonly used in linear power supplies, audio power amplifiers, cellular phones, RF receivers, and infrared remote controls. Its high-frequency and high-current handling capabilities makes it well-suited for these applications.
The working principle of the SI1303DL-T1-GE3 is fairly straightforward. When a voltage is applied to the device, it controls the flow of current between the N- and P-Channel by allowing electrons to flow from the source to the drain. The amount of current flow is controlled by the gate voltage, and the drain current is proportional to the gate voltage. The device can be used in either enhancement-mode or depletion-mode configurations, with different gate voltages for each mode.
In addition to its simple operation, the SI1303DL-T1-GE3 has other advantages, such as low power consumption and high levels of tolerance to temperature and voltage. Its ease of use and robust design makes it an attractive choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI1307DL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 0.85A SOT... |
SI1300BDL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 400MA SC-... |
SI1304BDL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 0.9A SC-7... |
SI1305DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 0.86A SC-7... |
SI1307EDL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 0.85A SC-... |
SI1303DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 670MA SOT... |
SI1305EDL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 0.86A SOT3... |
SI1307DL-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 0.85A SOT... |
SI1300BDL-T1-E3 | Vishay Silic... | -- | 96 | MOSFET N-CH 20V 400MA SOT... |
SI1303DL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 670MA SOT... |
SI1303EDL-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 670MA SOT... |
SI1304BDL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 0.9A SOT3... |
SI1305DL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 0.86A SOT3... |
SI1305EDL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 0.86A SOT3... |
SI1307EDL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 0.85A SOT... |
SI1308EDL-T1-GE3 | Vishay Silic... | -- | 1951 | MOSFET N-CH 30V 1.4A SOT3... |
SI1317DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 1.4A SC70... |
SI1302DL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 600MA SOT... |
SI1330EDL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 240MA SC-... |
SI1315DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 0.9A SC70-... |
SI1330EDL-T1-E3 | Vishay Silic... | 0.11 $ | 15000 | MOSFET N-CH 60V 240MA SOT... |
SI1302DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 600MA SC-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...