SI1304BDL-T1-GE3

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The SI1304BDL-T1-GE3 is a single N-channel enhancement mode power field-effect transistor (FET) from Vishay Siliconix. It is designed for high efficiency power switching applications such as load switches, DC-DC converters, and motor control, and is suitable for use in an operating temperature range from -55 °C to +150 °C.

The SI1304BDL-T1-GE3 has a maximum drain current of 40 A and a maximum drain-source voltage of 40 V. It also has an on-resistance of 16 mΩ (max) and a gate-source threshold voltage of 2.2 V (typical). The transistor features an integrated Schottky diode connected between the drain and source terminals that helps to reduce the body-diode voltage drop, thereby improving efficiency in switching applications.

The SI1304BDL-T1-GE3 is manufactured using a silicon chip and a metal oxide semiconductor (MOS) fabrication process. This process combines a metal gate on the surface of the chip with a dielectric layer and a silicon substrate. This combination creates a three-dimensional channel through which current can flow.

The operation of the transistor is determined by the gate voltage. When a positive gate voltage is applied, electrons are attracted towards the positively charged gate, creating a channel in the dielectric layer. This channel effectively connects the source and drain terminals, allowing current to flow from the source to the drain. By adjusting the gate voltage, the resistance of the channel can be controlled, allowing the transistor to be used to switch electrical signals.

The SI1304BDL-T1-GE3 transistor is ideal for use in power switching applications such as load switches, DC-DC converters, and motor control. Its high current handling capabilities and low on-resistance allow it to efficiently manage large amounts of power, while its integrated Schottky diode improves efficiency by reducing the body-diode voltage drop. The transistor’s wide operating temperature range makes it suitable for use in both industrial and commercial applications.

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