Allicdata Part #: | SI1317DL-T1-GE3TR-ND |
Manufacturer Part#: |
SI1317DL-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 1.4A SC70 |
More Detail: | P-Channel 20V 1.4A (Tc) 400mW (Ta), 500mW (Tc) Sur... |
DataSheet: | SI1317DL-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta), 500mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 272pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 1.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI1317DL-T1-GE3 is a part of a series of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) that provide excellent power efficiency and a wide range of operation voltages. It is a single type of MOSFET, meaning it contains just one active region channel in its semiconductor layer. The N-channel device also uses an electrostatic process to control the flow of current by controlling the voltage on the gate pin. It features a maximum drain-source voltage of 75 Volts (Vds) and a current of 13.7 Amps (Ids) at 25° Celsius (°C). The internal gate resistance (Rg) of this device is typically 20 Ohms (Ω) before it is turned on. The typical ON-resistance (Ron) of this device is between 0.09 Ohms and 0.22 Ohms at 25°C, depending on the drain voltage (Vds) given to it.
The SI1317DL-T1-GE3 MOSFET has a variety of applications. One of the most common uses is for power conditioning applications such as switching supplies and power subsystems. It can also be used for motor control and battery charging applications. The low ON-resistance of the device, for example, makes it suitable for charging applications since it can switch high currents with minimal loss. In addition, the wide range of operation voltages in the SI1317DL-T1-GE3 makes it compatible with a variety of applications.
The working principle of this device is based on a thin silicon dioxide (SiO2) layer that is located between the source and drain regions. The SiO2 layer serves as an insulator and prevents the flow of current through the channel even when voltage is applied to the gate. When the gate voltage is increased, it creates an electric field that weakens the SiO2 layer, allowing current to flow through the channel. By controlling the voltage applied to the gate, the flow of current through the device can be regulated.
The SI1317DL-T1-GE3 is an excellent choice for applications where high power efficiency and good performance are required. Its high performance and low cost make it suitable for a variety of applications, from basic switch supplies to more advanced motor control systems. Additionally, its wide range of operating voltages makes it compatible with a variety of systems.
The specific data is subject to PDF, and the above content is for reference
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