SI1330EDL-T1-E3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	280mW (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	0.6nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	2.5 Ohm @ 250mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	3V, 10V
Current - Continuous Drain (Id) @ 25°C:	240mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

SI1330EDL-T1-E3 is a single edge N-channel enhancement-mode vertical DMOS field effect transistor (FET) optimized for high-speed switching applications. These devices incorporate the latest DMOS technology and have a small footprint, low on-state resistance, and tight on/off design specifications. This device is ideal for applications such as home appliances, industrial products and lighting.

Applications

SI1330EDL-T1-E3 is designed for switch mode power supplies, lighting and general purpose switching applications. This device is suitable for both negative and positive gate-voltage operation. It is suitable for applications requiring high speed, low gate charge and low on-state resistance.

Features

The main features of SI1330EDL-T1-E3 are as follows:

• Low on-state resistance and gate charge
• Low switching loss
• High speed switching
• Small footprint
• Low gate threshold voltage

Working Principle

The working principle of SI1330EDL-T1-E3 is based on the n-channel enhancement MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure. This type of device is specifically designed for high speed switching applications. The frame of the device comprises a gate, source, drain and substrate. The gate is insulated from the source and the drain by an oxide layer. When the gate voltage is positive with respect to the source, a conductive channel is created between the source and the drain.

Conclusion

SI1330EDL-T1-E3 is a single edge N-channel enhancement-mode vertical DMOS field effect transistor (FET) optimized for high-speed switching applications. Its main features include low on-state resistance and gate charge, low switching loss, high-speed switching and a small footprint. The working principle of this device is based on the n-channel enhancement MOSFET structure, where a conductive channel is formed between the source and drain when the gate voltage is positive with respect to the source.

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