SI1307EDL-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI1307EDL-T1-GE3 is a Silicon-Martins-FET designed to provide high-efficiency, low-voltage power switching in applications where space is at a premium. It is a monolithic integrated circuit that utilizes advanced MOSFET (metal-oxide-semiconductor field-effect transistor) technology to deliver optimal performance. The device features a low threshold voltage and low gate-source capacitance for improved efficiency and reduced switching losses.

The SI1307EDL-T1-GE3 offers a wide range of features that make it suitable for use in a variety of applications, including automotive and consumer electronics. It can be used in high-current motor control, voltage regulation, and power supply applications. Additionally, the device is RoHS compliant and is compatible with lead-free soldering processes, making it an ideal choice for environmentally conscious designers.

The basic principle of operation of the SI1307EDL-T1-GE3 is simple: by applying a voltage to the gate, the device transfers a voltage from the drain to the source. This process is known as “punch-through” and is one of the most important principles of MOSFET devices. The device features a fast (<1 ns) switching speed, low gate capacitance (<40 pF) for improved efficiency, and high linearity for accurate voltage regulation.

The device offers a wide range of features that make it suitable for use in a variety of applications. It features a low-RDSON (on-resistance) to reduce conduction losses, a low turn-on delay to reduce switching losses, and a high-switching frequency capability to improve system efficiency. Additionally, the device has built-in ESD protection which helps protect it from electrostatic discharge damage. The device also supports temperature monitoring and can be used with gate drivers.

The SI1307EDL-T1-GE3 is a versatile and reliable device that makes it easy to achieve high-efficiency power switching and voltage regulation in a variety of applications. Its low power losses, wide operating temperature range, and built-in ESD protection make it an ideal choice for space-constrained designs requiring high performance and reliability. In addition, its fast switching speed and high linearity offer improved system efficiency and accurate voltage regulation. As a result, the SI1307EDL-T1-GE3 is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference