SI4101DY-T1-GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.9W (Ta), 6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8190pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	203nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	6 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	25.7A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SI4101DY-T1-GE3 Application Field and Working Principle
The SI4101DY-T1-GE3 is a depletion-mode MOSFET, which is used for switching various automotive systems, such as fuel injection, exhaust purification, and engine control systems. This MOSFET is capable of operating at very high current ratings and offers a wide range of on-resistance from 12 Ω to 100 Ω. It also has a low gate-source threshold voltage of -2.6V and is designed for use in low-voltage circuits.The SI4101DY-T1-GE3 has a low gate-source capacitance and can easily be connected to many types of microcontrollers. The device requires only a small gate voltage to be active, which makes it ideal for battery powered applications. It is available in a small 8-Lead, MiniSOIC package and is suitable for use in a variety of automotive systems. MOSFETs are a type of field-effect transistor (FET) device, which are used as electronic switches. They are voltage-controlled switches, meaning that a small change in the gate voltage can cause a large change in the flow of current through the transistor. MOSFETs are used extensively in applications that require high-speed switching, and are an important component in digital circuits.The working principle of the SI4101DY-T1-GE3 is simple. When a positive voltage is applied to the gate of the MOSFET, it causes a field effect, which increases the conductivity of the transistor. This allows current to pass through the transistor, activating the output signal. When the gate voltage is removed, the field effect disappears and the MOSFET reverts to its off state.The SI4101DY-T1-GE3 can be used in a variety of switching applications, including automotive systems, signal conditioning, and DC/AC converters. It is also useful in applications that require fast switching such as DC-DC converters and automotive power systems. The device features excellent noise immunity and is capable of operating at very high current ratings.Due to its low gate-to-source capacitance, the SI4101DY-T1-GE3 is a suitable choice for use in low voltage circuits. The device is also tolerant of noise, making it a good choice for automotive systems that require a high degree of immunity to noise.In summary, the SI4101DY-T1-GE3 is a depletion-mode MOSFET that is used for switching various automotive systems, such as fuel injection, exhaust purification, and engine control systems. The working principle of the device is simple, and it can be used in a variety of applications due to its high current ratings, excellent noise immunity, and low gate-to-source capacitance. The device is available in a small 8-Lead, MiniSOIC package, making it well suited for use in low voltage circuits.

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