Allicdata Part #: | SI4160DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4160DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 25.4A 8-SOIC |
More Detail: | N-Channel 30V 25.4A (Tc) 2.5W (Ta), 5.7W (Tc) Surf... |
DataSheet: | SI4160DY-T1-GE3 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 5.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2071pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4.9 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25.4A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4160DY-T1-GE3 MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is a type of single component that is suitable for applications in a variety of industries. This MOSFET is designed to have very low capacitance and on-resistance, making it ideal for high-speed digital application. This component is also designed to be used in switching circuits and can operate up to 175-degrees Celsius in temperatures. In terms of design, the SI4160DY-T1-GE3 utilizes advanced photolitography and is optimized for low on-resistance for enhanced performance. In addition, this component is surrounded by a low-inductance, exact-tolerance metal based substrate for better thermal management and improved high-frequency performance.
In terms of applications, the SI4160DYT-T1-GE3 is suitable for a range of industries, including automotive, data processing equipment, industrial, telecoms, and more. In terms of automotive applications, this component can be used in cars, trucks, and buses. In dataprocessing equipment, the component can be used in applications such as servers and computers. In telecoms, the component is suitable for router and switch applications. In addition, the component can be used in industrial applications, such as in factory automation, process control, and motor control.
The working principle of the SI4160DY-T1-GE3 is relatively straightforward. The component is a voltage-controlled device, meaning that it relies on voltage to control an electric current. The device is designed to be switched on and off using a gate voltage that is applied to the Gate terminal. When the gate voltage is applied, the MOSFET will conduct electricity across the source and drain terminals, depending on the current that is applied. When the gate voltage is removed, the device will not conduct electricity and will turn off.
The SI4160DY-T1-GE3 is a highly versatile component that is suitable for a variety of applications. It is designed to be used in high-speed digital applications as well as in switching circuits. It is also optimized for low on-resistance and comes with a low-inductance, exact-tolerance metal based substrate for better thermal management and improved high-frequency performance. In terms of applications, the component is suitable for automotive, data processing equipment, industrial, telecoms, and more. In addition, the working principle of the component is relatively straightforward, as it relies on voltage control to enable and disable an electric current.
The specific data is subject to PDF, and the above content is for reference
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