| Allicdata Part #: | SI4102DY-T1-GE3TR-ND |
| Manufacturer Part#: |
SI4102DY-T1-GE3 |
| Price: | $ 0.33 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 3.8A 8-SOIC |
| More Detail: | N-Channel 100V 3.8A (Tc) 2.4W (Ta), 4.8W (Tc) Surf... |
| DataSheet: | SI4102DY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.33000 |
| 10 +: | $ 0.32010 |
| 100 +: | $ 0.31350 |
| 1000 +: | $ 0.30690 |
| 10000 +: | $ 0.29700 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.4W (Ta), 4.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 370pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 158 mOhm @ 2.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.8A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI4102DY-T1-GE3 is a field-effect transistor (FET) that is widely used in various applications. It is a single enhancement metal-oxide-semiconductor (eMOS) field-effect transistor, which is a type of transistor that can amplify signals and drive currents. This type of transistor is used both as a voltage-controlled current source and as an amplifier. The device is also widely used in power management, data switching, and control applications.
The SI4102DY-T1-GE3 operates as a voltage-controlled voltage source, where it draws current from a single input, and amplifies the current in order to provide power to an output. The device has a gate voltage that, when adjusted, changes the current flow through the device, allowing it to either increase or decrease the current flow. This ability to control current flow makes the transistor a useful device for amplifying signals, driving currents and controlling power supplies.
The device is also commonly used in digital circuits, as it allows for the manipulation of digital signals. By applying a voltage to the input, the current flow through the transistor can be adjusted to amplify, or attenuate, the signal. This ability to manipulate signals makes the transistor ideal for powering and controlling digital circuits, such as microprocessors, memory and logic circuits. The device is also widely used in radio-frequency (RF) circuits, as its ability to switch signals makes it a good choice for amplifying and controlling radio waves.
The SI4102DY-T1-GE3 is also commonly used in power management applications, as it can be used to regulate the current flow in a circuit. By applying a voltage to the gate, the current flow through the transistor can be adjusted, allowing for precise control of the power delivered to a circuit. The device is often used in switching power supplies, as it can be used to regulate the current flow in a regulated power supply.
The SI4102DY-T1-GE3 is a powerful and versatile transistor, which can be used in a variety of applications. It can be used to amplify signals, drive currents, or control power supplies. It can also be used to manipulate digital signals, or as a current regulator in power management applications. The device is a versatile and powerful component for many digital and analog circuits.
The specific data is subject to PDF, and the above content is for reference
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SI4102DY-T1-GE3 Datasheet/PDF