Allicdata Part #: | SI4134DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4134DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 14A 8-SOIC |
More Detail: | N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface ... |
DataSheet: | SI4134DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 846pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4134DY-T1-GE3 is a metal-oxide-semiconductor field-effect transistor (MOSFET) that belongs to the class of semiconductor devices whose mode of operation is governed by the field-effect principle. It is designed to be used in the application-specific integrated circuit (ASIC) field. The SI4134DY-T1-GE3 is a high-side, N-channel MOSFET, which is a type of transistor used for applications that require the control of high voltage or power, such as power converters, power supplies, motor drives, and other applications.
The working principle of the SI4134DY-T1-GE3 is based on the field effect. It works in such a way that when a gate voltage is applied to the transistor, an electric field is created which, in turn, causes the conductance of the channel to change. This allows the current flow through the transistor to be controlled by the voltage of the gate.
The SI4134DY-T1-GE3, being a high-side, N-channel MOSFET, is suitable for use in applications that require high load current handling capacity and low on-state resistance. The typical drain-source on-state resistance (RDS) of the device is 17 mΩ while the typical drain current it can handle is 50A. The device is available in a space-saving 3x3mm Package and has an operating voltage range of 2.5V to 15V.
When it comes to the applications of the SI4134DY-T1-GE3, it is primarily used for power conversion, power supply, and motor drive applications. It can be used for applications such as DC/DC converters, power switching, solenoid and inductive loads, and voltage regulators.
The SI4134DY-T1-GE3 is a robust MOSFET that has a wide range of features and characteristics, which make it suitable for use in a wide range of applications. It has low on-state resistance and a low gate charge, making it efficient at high current levels. It also has a fast switching speed and is able to handle high voltages, making it suitable for use in power applications.
Overall, the SI4134DY-T1-GE3 is a powerful and reliable MOSFET that is suitable for use in a variety of applications. Its field-effect operation, wide range of features and characteristics, and low on-state resistance make it the ideal choice for applications that require the control of high voltage or power, such as power converters, power supplies, motor drives, and other applications.
The specific data is subject to PDF, and the above content is for reference
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