Allicdata Part #: | SI4124DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4124DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 20.5A 8-SOIC |
More Detail: | N-Channel 40V 20.5A (Tc) 2.5W (Ta), 5.7W (Tc) Surf... |
DataSheet: | SI4124DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 5.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3540pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20.5A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
The SI4124DY-T1-GE3 is a single high voltage mosfet device developed and manufactured by Vishay Siliconix. It offers a low on-resistance and high forward-blocking voltage in a compact single-channel package, making it ideal for use in a wide range of applications. In this article, we will discuss the application fields and working principles of the SI4124DY-T1-GE3.
Application fields
The SI4124DY-T1-GE3 is a high voltage single MOSFET device housed in a small package, allowing it to be used in a variety of applications. For instance, it can be used in automotive applications such as high voltage DC-DC converters, as well as industrial automation, medical, and communications markets. Additionally, its low on-resistance and high forward-blocking voltage allow it to be used in applications where power and voltage are paramount, such as power management, switch-mode power supplies (SMPS), and automotive power systems.
Working Principle
The SI4124DY-T1-GE3 is a single high voltage MOSFET device, meaning that it consists of one metal-oxide-semiconductor field-effect transistor (MOSFET) packaged in a compact, single-channel package. A MOSFET is a transistor that controls the flow of current by modulating an input voltage. In the case of the SI4124DY-T1-GE3, the voltage is applied across the drain and source terminals, and a small current (known as the gate current) is applied across the gate and source terminals. This gate current modulates the drain-source current, allowing current to flow through the device when the voltage across the drain and source is above a certain threshold. Additionally, the SI4124DY-T1-GE3 utilizes a high voltage rating, meaning that it can operate with higher voltages than traditional transistors, allowing it to be used in specific, high-voltage applications.
Features
The SI4124DY-T1-GE3 utilizes a high voltage rating, allowing it to be used for applications operating at higher voltages than traditional transistors can support. Additionally, with its low on-resistance and high forward-blocking voltage, it can handle higher power levels and provide better voltage protection than traditional transistors. It also has a wide temperature range, allowing it to be operated in a variety of temperatures. Finally, its small single-channel package allows it to be used in applications where space is a premium.
Conclusion
The SI4124DY-T1-GE3 is a high voltage single MOSFET device manufactured by Vishay Siliconix. It offers excellent performance in a small package, with its low on-resistance and high forward-blocking voltage allowing it to be used in a variety of applications. Additionally, its wide temperature range and single-channel package further ensure its performance in a number of applications. Ultimately, the SI4124DY-T1-GE3 is an excellent choice for those looking for a versatile, high-performance single MOSFET device.
The specific data is subject to PDF, and the above content is for reference
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