
Allicdata Part #: | SI4124DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4124DY-T1-GE3 |
Price: | $ 0.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 20.5A 8-SOIC |
More Detail: | N-Channel 40V 20.5A (Tc) 2.5W (Ta), 5.7W (Tc) Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.72000 |
10 +: | $ 0.69840 |
100 +: | $ 0.68400 |
1000 +: | $ 0.66960 |
10000 +: | $ 0.64800 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 5.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3540pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20.5A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The SI4124DY-T1-GE3 is a single high voltage mosfet device developed and manufactured by Vishay Siliconix. It offers a low on-resistance and high forward-blocking voltage in a compact single-channel package, making it ideal for use in a wide range of applications. In this article, we will discuss the application fields and working principles of the SI4124DY-T1-GE3.
Application fields
The SI4124DY-T1-GE3 is a high voltage single MOSFET device housed in a small package, allowing it to be used in a variety of applications. For instance, it can be used in automotive applications such as high voltage DC-DC converters, as well as industrial automation, medical, and communications markets. Additionally, its low on-resistance and high forward-blocking voltage allow it to be used in applications where power and voltage are paramount, such as power management, switch-mode power supplies (SMPS), and automotive power systems.
Working Principle
The SI4124DY-T1-GE3 is a single high voltage MOSFET device, meaning that it consists of one metal-oxide-semiconductor field-effect transistor (MOSFET) packaged in a compact, single-channel package. A MOSFET is a transistor that controls the flow of current by modulating an input voltage. In the case of the SI4124DY-T1-GE3, the voltage is applied across the drain and source terminals, and a small current (known as the gate current) is applied across the gate and source terminals. This gate current modulates the drain-source current, allowing current to flow through the device when the voltage across the drain and source is above a certain threshold. Additionally, the SI4124DY-T1-GE3 utilizes a high voltage rating, meaning that it can operate with higher voltages than traditional transistors, allowing it to be used in specific, high-voltage applications.
Features
The SI4124DY-T1-GE3 utilizes a high voltage rating, allowing it to be used for applications operating at higher voltages than traditional transistors can support. Additionally, with its low on-resistance and high forward-blocking voltage, it can handle higher power levels and provide better voltage protection than traditional transistors. It also has a wide temperature range, allowing it to be operated in a variety of temperatures. Finally, its small single-channel package allows it to be used in applications where space is a premium.
Conclusion
The SI4124DY-T1-GE3 is a high voltage single MOSFET device manufactured by Vishay Siliconix. It offers excellent performance in a small package, with its low on-resistance and high forward-blocking voltage allowing it to be used in a variety of applications. Additionally, its wide temperature range and single-channel package further ensure its performance in a number of applications. Ultimately, the SI4124DY-T1-GE3 is an excellent choice for those looking for a versatile, high-performance single MOSFET device.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4102DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 3.8A 8-S... |
SI4143DY-T1-GE3 | Vishay Silic... | 0.22 $ | 10000 | MOSFET P-CHANNEL 30V 25.3... |
SI4112-D-GM | Silicon Labs | -- | 1050 | IC SYNTHESIZER IF ONLY 28... |
SI4178DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A 8-SOI... |
SI4122M-EVB | Silicon Labs | 151.6 $ | 1000 | BOARD EVALUATION FOR SI41... |
SI4133GX2M-EVB | Silicon Labs | 0.0 $ | 1000 | BOARD EVAL DUAL-BAND GSM-... |
SI4113-D-GTR | Silicon Labs | 3.67 $ | 1000 | IC SYNTHESIZER RF1/RF2 24... |
SI4134DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 14A 8-SOI... |
SI4133-D-GM | Silicon Labs | 4.98 $ | 664 | IC SYNTHESIZER RF DUALBAN... |
SI4122-BT | Silicon Labs | 0.0 $ | 1000 | IC SYNTHESIZER RF2/IF 24T... |
SI4110DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 80V 17.3A 8-S... |
SI4113-D-GMR | Silicon Labs | -- | 1000 | IC SYNTHESIZER RF-ONLY 28... |
SI4122-EVB | Silicon Labs | 0.0 $ | 1000 | BOARD EVALUATION FOR SI41... |
SI4123-D-GM | Silicon Labs | 4.0 $ | 543 | IC SYNTHESIZER RF1/IF 28Q... |
SI4114DY-T1-E3 | Vishay Silic... | -- | 2500 | MOSFET N-CH 20V 20A 8-SOI... |
SI4160DY-T1-GE3 | Vishay Silic... | -- | 2500 | MOSFET N-CH 30V 25.4A 8-S... |
SI4113-D-GT | Silicon Labs | 3.85 $ | 62 | IC SYNTHESIZER RF1/RF2 24... |
SI4126-BM | Silicon Labs | -- | 1000 | IC SYNTHESIZER WLAN RF2/I... |
SI4112-EVB | Silicon Labs | 0.0 $ | 1000 | BOARD EVALUATION FOR SI41... |
SI4126M-EVB | Silicon Labs | 0.0 $ | 1000 | BOARD EVALUATION FOR SI41... |
SI4124DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 20.5A 8-S... |
SI4123-D-GT | Silicon Labs | -- | 2 | IC SYNTHESIZER RF1/IF 24T... |
SI4123M-EVB | Silicon Labs | 0.0 $ | 1000 | BOARD EVALUATION FOR SI41... |
SI4136-F-BM | Silicon Labs | 0.0 $ | 1000 | SYNTH WLAN SAT RADIO(RF1/... |
SI4114DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 20A 8-SOI... |
SI4108DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 75V 20.5A 8-S... |
SI4104DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 4.6A 8-S... |
SI4158DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 36.5A 8-S... |
SI4133T-BM | Silicon Labs | -- | 1000 | IC RF SYNTHESIZER DUAL 28... |
SI4136M-EVB | Silicon Labs | 151.6 $ | 1000 | BOARD EVALUATION FOR SI41... |
SI4178DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A 8SON-... |
SI4113M-EVB | Silicon Labs | 151.6 $ | 1000 | BOARD EVALUATION FOR SI41... |
SI4123-BT | Silicon Labs | 0.0 $ | 1000 | IC SYNTHESIZER RF1/IF 24T... |
SI4133-D-GT | Silicon Labs | -- | 3230 | IC SYNTHESIZR RF1/RF2/IF ... |
SI4136-F-GM | Silicon Labs | -- | 414 | IC SYNTHESIZER RF1/RF2/IF... |
SI4136-F-GTR | Silicon Labs | 90.29 $ | 150 | IC WLAN SAT RADIO 24TSSOP |
SI4162DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 19.3A 8-S... |
SI4115G-BM | Silicon Labs | 0.0 $ | 1000 | FREQUENCY GSM/GPRS SYNTH ... |
SI4126-F-BMR | Silicon Labs | 0.0 $ | 1000 | IC SYNTHESIZER RF2/IF 28M... |
SI4114G-BM | Silicon Labs | 0.0 $ | 1000 | IC RF FREQ SYNTH VCO 28QF... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
