SI4108DY-T1-GE3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.6W (Ta), 7.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2100pF @ 38V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	54nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	9.8 mOhm @ 13.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20.5A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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Application Field and Working Principle of SI4108DY-T1-GE3

The SI4108DY-T1-GE3 is a dual N-channel enhancement mode MOSFET. It is a product of Vishay Siliconix, and is designed for low voltage switching and level shifting applications. Because of its low on-resistance and low input capacitance, it is suitable for use in high-speed signal switching applications.

Main Features:

The main features of the SI4108DY-T1-GE3 include:• Dual N-channel MOSFET• Low voltage operation• Low input capacitance• Low on-resistance• High-speed signal switching• Excellent thermal stability

Application Field of SI4108DY-T1-GE3

The SI4108DY-T1-GE3 is suitable for a variety of applications, including power switches, DC-DC converters, automotive supplies, and AC switches. It can also be used in digital signal processing applications, analog signal processing applications, and high frequency signal switching applications.

Working Principle of SI4108DY-T1-GE3

The SI4108DY-T1-GE3 is a dual N-channel enhancement mode MOSFET, which means that it can be used to amplify signals. The dual N-channel MOSFET works by allowing a small amount of current to pass through it, depending on the voltage applied to its gate. The voltage applied to the gate modulates the current flow, and this current flow can be used to control other circuits or signals. The SI4108DY-T1-GE3 has a low on-resistance and low input capacitance, which makes it well suited for high-speed signal switching applications. It has excellent thermal stability, which makes it suitable for use in a variety of temperature environments.

Conclusion

The SI4108DY-T1-GE3 is a dual N-channel enhancement mode MOSFET that is suitable for low voltage switching and level shifting applications. It has a low on-resistance and low input capacitance, which make it well suited for high-speed signal switching applications. The SI4108DY-T1-GE3 is a highly versatile component that can be used for a variety of applications, including power switches, DC-DC converters, automotive supplies, and AC switches.

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