SI4162DY-T1-GE3 Allicdata Electronics

SI4162DY-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SI4162DY-T1-GE3TR-ND

Manufacturer Part#:

SI4162DY-T1-GE3

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 19.3A 8-SOIC
More Detail: N-Channel 30V 19.3A (Tc) 2.5W (Ta), 5W (Tc) Surfac...
DataSheet: SI4162DY-T1-GE3 datasheetSI4162DY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.28000
10 +: $ 0.27160
100 +: $ 0.26600
1000 +: $ 0.26040
10000 +: $ 0.25200
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4162DY-T1-GE3 is a high performance, robust and easy to use N-Channel MOSFET transistor designed for low voltage, high current applications. The device is optimal for use as a switch in DC-DC converters, motor control, and general load switching applications. This transistor is constructed with a highly-conductive, low-dissipation silicon chip that ensures a low on resistance in both forward and reverse directions, making it an ideal choice for high power applications.

The SI4162DY-T1-GE3 is an ideal choice for applications involving high-voltage and high-current circuits, including DC-DC converters, motor control, load switching and so on. This transistor has an impressive maximum drain current of 32A and a very low on resistance of just 0.4∙. Its maximum drain-source resistance is just 0.45∙ and its maximum drain-source voltage is 500V. It also features extremely low gate threshold voltage, making it the perfect choice for sensitive switching applications.

The device is constructed with a silicon gate-to-cathode binary. It has a high switching speed and its gate capacitance value is excellent, ensuring fast propagation time. It has an incredible gate-source breakdown voltage of approximately 500V and an ultra-high breakdown voltage of almost 1000V. The device\'s gate Oxide breakdown voltage is an outstanding 1800V. Its substrate-drain voltage is 700V and its turn-on/off times are excellent, making them suitable for even high frequency applications.

The SI4162DY-T1-GE3 also features excellent thermal performance. Its thermal conductivity is higher than conventional materials and its thermal resistance is much lower, allowing heat to dissipate faster and more evenly, making it a great choice for applications demanding high power and current.The device\'s low input capacitance ensures fast switching speed and low noise levels.

The SI4162DY-T1-GE3 is a versatile and reliable N-Channel MOSFET transistor with very low on resistance, low capacitance and excellent thermal performance. With its high switching speed, low noise levels and high voltage and current ratings, it is an ideal choice for applications in DC-DC converters, motor control, load switching and other high power applications.

The specific data is subject to PDF, and the above content is for reference

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