
SI4162DY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4162DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4162DY-T1-GE3 |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 19.3A 8-SOIC |
More Detail: | N-Channel 30V 19.3A (Tc) 2.5W (Ta), 5W (Tc) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.28000 |
10 +: | $ 0.27160 |
100 +: | $ 0.26600 |
1000 +: | $ 0.26040 |
10000 +: | $ 0.25200 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1155pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.9 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19.3A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI4162DY-T1-GE3 is a high performance, robust and easy to use N-Channel MOSFET transistor designed for low voltage, high current applications. The device is optimal for use as a switch in DC-DC converters, motor control, and general load switching applications. This transistor is constructed with a highly-conductive, low-dissipation silicon chip that ensures a low on resistance in both forward and reverse directions, making it an ideal choice for high power applications.
The SI4162DY-T1-GE3 is an ideal choice for applications involving high-voltage and high-current circuits, including DC-DC converters, motor control, load switching and so on. This transistor has an impressive maximum drain current of 32A and a very low on resistance of just 0.4∙. Its maximum drain-source resistance is just 0.45∙ and its maximum drain-source voltage is 500V. It also features extremely low gate threshold voltage, making it the perfect choice for sensitive switching applications.
The device is constructed with a silicon gate-to-cathode binary. It has a high switching speed and its gate capacitance value is excellent, ensuring fast propagation time. It has an incredible gate-source breakdown voltage of approximately 500V and an ultra-high breakdown voltage of almost 1000V. The device\'s gate Oxide breakdown voltage is an outstanding 1800V. Its substrate-drain voltage is 700V and its turn-on/off times are excellent, making them suitable for even high frequency applications.
The SI4162DY-T1-GE3 also features excellent thermal performance. Its thermal conductivity is higher than conventional materials and its thermal resistance is much lower, allowing heat to dissipate faster and more evenly, making it a great choice for applications demanding high power and current.The device\'s low input capacitance ensures fast switching speed and low noise levels.
The SI4162DY-T1-GE3 is a versatile and reliable N-Channel MOSFET transistor with very low on resistance, low capacitance and excellent thermal performance. With its high switching speed, low noise levels and high voltage and current ratings, it is an ideal choice for applications in DC-DC converters, motor control, load switching and other high power applications.
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