SI4122DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4122DY-T1-GE3TR-ND

Manufacturer Part#:

SI4122DY-T1-GE3

Price: $ 0.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 27.2A 8-SOIC
More Detail: N-Channel 40V 27.2A (Tc) 3W (Ta), 6W (Tc) Surface ...
DataSheet: SI4122DY-T1-GE3 datasheetSI4122DY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.67000
10 +: $ 0.64990
100 +: $ 0.63650
1000 +: $ 0.62310
10000 +: $ 0.60300
Stock 1000Can Ship Immediately
$ 0.67
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4122DY-T1-GE3 is a single N-channel enhancement mode plastic package field-effect transistor (FET). This type of transistor is used in a wide range of applications, usually as a switch, amplifier, or modulator. The advantages of using an FET include low power consumption, high impedance levels, and switching capabilities. The SI4122DY-T1-GE3 offers excellent switching performance and has a very low on-resistance (Rdson) compared to other similar FETs.

The SI4122DY-T1-GE3 has a source-drain voltage rating of 30 volts, a drain-source current rating of 2.5 A, and a gate-source threshold voltage of -4 volts. The package of the FET is SOT-143-2, which measures 3 mm x 2 mm. This type of transistor is used in a variety of applications, including power management, lighting and audio control, motor control, and signal conditioning. It is also used in automotive and aerospace applications.

The working principle of an FET is based on the behavior of an electrical charge when it passes through a semiconductor material. The two main components of the FET are the source region and the drain region. When a gate voltage is applied, the charge carriers (electrons or holes) form a conductive channel between the source and the drain regions. This enables the current to flow between the source and drain regions, thus creating a conducting path between them. This makes the FET a key component used in controlling the current flow in various circuits.

The SI4122DY-T1-GE3 is used in many applications due to its low on-resistance and high switching performance. It can be used in systems that require low-level switching, such as power management and lighting systems. It can also be used in audio control and motor control applications. The FET is also suitable for automotive and aerospace applications due to its small size and high switching frequency. It is easy to use and offers excellent performance in these applications.

In conclusion, the SI4122DY-T1-GE3 is a single N-channel enhancement mode plastic package FET. This type of transistor offers excellent switching performance and low on-resistance, making it suitable for a range of applications, including power management, lighting and audio control, motor control, and signal conditioning. The working principle of an FET is based on the behavior of electrical charge when it passes through a semiconductor material. The two main components of the FET are the source region and the drain region, which allow for the controlled current flow when powered. The SI4122DY-T1-GE3 is an excellent choice for many applications due to its small size, low on-resistance, and high switching frequency.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SI41" Included word is 40
Part Number Manufacturer Price Quantity Description
SI4102DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 100V 3.8A 8-S...
SI4143DY-T1-GE3 Vishay Silic... 0.22 $ 10000 MOSFET P-CHANNEL 30V 25.3...
SI4112-D-GM Silicon Labs -- 1050 IC SYNTHESIZER IF ONLY 28...
SI4178DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A 8-SOI...
SI4122M-EVB Silicon Labs 151.6 $ 1000 BOARD EVALUATION FOR SI41...
SI4133GX2M-EVB Silicon Labs 0.0 $ 1000 BOARD EVAL DUAL-BAND GSM-...
SI4113-D-GTR Silicon Labs 3.67 $ 1000 IC SYNTHESIZER RF1/RF2 24...
SI4134DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 14A 8-SOI...
SI4133-D-GM Silicon Labs 4.98 $ 664 IC SYNTHESIZER RF DUALBAN...
SI4122-BT Silicon Labs 0.0 $ 1000 IC SYNTHESIZER RF2/IF 24T...
SI4110DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 80V 17.3A 8-S...
SI4113-D-GMR Silicon Labs -- 1000 IC SYNTHESIZER RF-ONLY 28...
SI4122-EVB Silicon Labs 0.0 $ 1000 BOARD EVALUATION FOR SI41...
SI4123-D-GM Silicon Labs 4.0 $ 543 IC SYNTHESIZER RF1/IF 28Q...
SI4114DY-T1-E3 Vishay Silic... -- 2500 MOSFET N-CH 20V 20A 8-SOI...
SI4160DY-T1-GE3 Vishay Silic... -- 2500 MOSFET N-CH 30V 25.4A 8-S...
SI4113-D-GT Silicon Labs 3.85 $ 62 IC SYNTHESIZER RF1/RF2 24...
SI4126-BM Silicon Labs -- 1000 IC SYNTHESIZER WLAN RF2/I...
SI4112-EVB Silicon Labs 0.0 $ 1000 BOARD EVALUATION FOR SI41...
SI4126M-EVB Silicon Labs 0.0 $ 1000 BOARD EVALUATION FOR SI41...
SI4124DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 40V 20.5A 8-S...
SI4123-D-GT Silicon Labs -- 2 IC SYNTHESIZER RF1/IF 24T...
SI4123M-EVB Silicon Labs 0.0 $ 1000 BOARD EVALUATION FOR SI41...
SI4136-F-BM Silicon Labs 0.0 $ 1000 SYNTH WLAN SAT RADIO(RF1/...
SI4114DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 20A 8-SOI...
SI4108DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 75V 20.5A 8-S...
SI4104DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 100V 4.6A 8-S...
SI4158DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 20V 36.5A 8-S...
SI4133T-BM Silicon Labs -- 1000 IC RF SYNTHESIZER DUAL 28...
SI4136M-EVB Silicon Labs 151.6 $ 1000 BOARD EVALUATION FOR SI41...
SI4178DY-T1-E3 Vishay Silic... -- 1000 MOSFET N-CH 30V 12A 8SON-...
SI4113M-EVB Silicon Labs 151.6 $ 1000 BOARD EVALUATION FOR SI41...
SI4123-BT Silicon Labs 0.0 $ 1000 IC SYNTHESIZER RF1/IF 24T...
SI4133-D-GT Silicon Labs -- 3230 IC SYNTHESIZR RF1/RF2/IF ...
SI4136-F-GM Silicon Labs -- 414 IC SYNTHESIZER RF1/RF2/IF...
SI4136-F-GTR Silicon Labs 90.29 $ 150 IC WLAN SAT RADIO 24TSSOP
SI4162DY-T1-GE3 Vishay Silic... -- 1000 MOSFET N-CH 30V 19.3A 8-S...
SI4115G-BM Silicon Labs 0.0 $ 1000 FREQUENCY GSM/GPRS SYNTH ...
SI4126-F-BMR Silicon Labs 0.0 $ 1000 IC SYNTHESIZER RF2/IF 28M...
SI4114G-BM Silicon Labs 0.0 $ 1000 IC RF FREQ SYNTH VCO 28QF...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics