SI4126DY-T1-GE3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4126DY-T1-GE3 is a type of single-channel MOSFET that is used throughout multiple industries. It is a very useful device that has multiple applications and can be used in a variety of ways. The SI4126DY-T1-GE3 is a high-side useful device that includes a voltage drop of 240mV at 15A continuous current. The device features a low on-state resistance of just 10mohm as well as a fast switching speed of just 10nsec. It also has good thermal performance and is able to operate up to 150°C. This makes it a great choice for applications that require high current or fast switching speed. One of the best features of this device is its versatility and ability to be used in a range of applications. This article will discuss the application fields and the working principle of the SI4126DY-T1-GE3.

The SI4126DY-T1-GE3 is used in a variety of applications including automotive, telecommunications, networking, industrial, and consumer applications. In automotive applications, the device is used for controlling power/loads in powertrain and lighting systems as well as motor control applications. It is also used in telecommunication and networking systems to control and switch signals. In industrial applications, the device is used to control loads in machines, control current in circuits, and in the protection of sensitive components. In consumer applications, the device is used in a number of devices including air conditioners, refrigerators, and other home appliances.

The SI4126DY-T1-GE3 is a single-channel MOSFET with an integrated GDS (Gate-Drain-Source) structure. This means that it has three terminals, the gate, the drain, and the source. The operation of the device is based on a basic principle called the MOSFET effectiveness. This is the ability of a MOSFET to control the electric current based on the voltage applied to the Gate terminal. When a positive voltage is applied at the gate, the device is in its “on” state, and current can flow from the drain to the source. The device is also in its “on” state when a negative voltage is applied at the gate, and current can flow from the source to the drain.

The SI4126DY-T1-GE3 is a highly useful device that can be used in a range of applications. It has a low on-state resistance, a fast switching speed, and good thermal performance, which makes it a great choice for applications that require high current or fast switching speed. The device also has an integrated GDS structure, which means that it can be used to control electric current based on the voltage applied to the Gate terminal. This makes it an ideal choice for a variety of applications in automotive, telecommunications, networking, industrial, and consumer sectors.

The specific data is subject to PDF, and the above content is for reference