SI4128DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4128DY-T1-E3-ND

Manufacturer Part#:

SI4128DY-T1-E3

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 10.9A 8-SOIC
More Detail: N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surfac...
DataSheet: SI4128DY-T1-E3 datasheetSI4128DY-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.19000
10 +: $ 0.18430
100 +: $ 0.18050
1000 +: $ 0.17670
10000 +: $ 0.17100
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4128DY-T1-E3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) which is designed to enhance the performance of various circuit applications. MOSFETs are three-terminal devices which are widely used in power management, computing, motor control, and more. The SI4128DY-T1-E3 offers several advantages over other types of transistors, such as low threshold voltage, low thermal resistance, and wide supply voltage range.

The SI4128DY-T1-E3 is a important component for any system or circuit that requires high-frequency operation or switching. The device includes an N-channel power mosfet which is capable of delivering up to 20V with a maximum current of 300mA. The unique design of this MOSFET includes a low gate threshold voltage which helps to optimize power efficiency and performance. The SI4128DY-T1-E3 also features a low thermal resistance, which ensures that the device does not suffer from excessive heat build-up at higher operational temperatures.

The working principle of the SI4128DY-T1-E3 is quite simple. The MOSFET is designed with a gate which is the control terminal, a drain which is the output terminal, and a source which is the input terminal. When a positive voltage is applied to the gate, the channel of the MOSFET begins to conduct current in between the drain and the source. This allows for current to be switched on and off using a small control voltage. The MOSFET can be used as a switch or as an amplifier depending on its application.

The SI4128DY-T1-E3 is commonly used in a variety of circuit applications. It is well-suited for use in high-frequency switching circuits, power management, motor control, and more. It is also a great choice for use in consumer electronics such as televisions, cell phones, and gaming consoles. The SI4128DY-T1-E3 is a reliable and durable device which is capable of withstanding both high and low temperatures as well as a wide range of supply voltages.

In conclusion, the SI4128DY-T1-E3 is a versatile and reliable three-terminal N-channel MOSFET which is designed to enhance the performance of various circuit applications. The device offers excellent switching speeds, low thermal resistance, and a wide range of supply voltage. It is well-suited for applications such as motor control, high-frequency switching, power management, and more. As a result, the SI4128DY-T1-E3 is an ideal choice for engineers and technicians who require reliable and high-performance devices in their circuit designs.

The specific data is subject to PDF, and the above content is for reference

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