SI4128DY-T1-GE3

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The SI4128DY-T1-GE3 is a type of N-Channel PowerTrench® MOSFET that allows for high-performance power designs for a variety of switched-mode converters and voltage regulators. This device offers a fast switching response, lower gate charge, and improved efficiency and thermal characteristics. The main application fields of the SI4128DY-T1-GE3 including transistors, FETs, Mosfets, and other single-stage applications for power management.

The device is typically used in applications such as DC-DC converters, synchronous buck regulators, step-down DC-DC regulators, voltage regulators, and power management systems. For these applications, the SI4128DY-T1-GE3 MOSFET has several advantages, such as its high operating frequency, lower gate charge and optimized performance.

The working principle of the SI4128DY-T1-GE3 MOSFET is based on the principle of a MOSFET transistors. In an N-channel MOSFET, electrons in the source and drain regions are the charge carriers which control the gate voltage. The gate voltage can either be negative for an N-channel MOSFET or positive for a P-channel MOSFET. When the gate voltage is changed, electrons in the source and drain regions can pass through the gate and come and go from the source and drain regions. This in turn affects the current flowing through the device and can either increase or decrease depending on the gate voltage.

The SI4128DY-T1-GE3 also offers an ultra-low on-resistance (RDS(on)) and has a gate charge (Qg) of 4.5nC. The device is also protected against over-voltage and reverse-current during operation. These features provide design flexibility when using this device in high-power applications. In addition, it has a low gate-to-source voltage rated (VGS) of -10V to +10V.

The SI4128DY-T1-GE3 has a high drain-to-source voltage rated (VDS) at +/-20V, which allows it to be used in higher power applications and offers reliable operation over a wide range of temperatures. It also provides excellent switching performance, which improves the efficiency and overall performance of the system. The low drain-to-source voltage drop (VDSS) of 20V helps to reduce power dissipation.

Overall, the SI4128DY-T1-GE3 offers excellent power management and switching performance. Its fast switching time, low gate charge, and low on-resistance make it a great choice for applications where power management and efficiency are critical. The device can operate in a wide range of temperatures, is highly reliable, and provides an optimized performance for switched-mode converters and voltage regulators.

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