
SI4134DY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4134DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4134DY-T1-E3 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 14A 8-SOIC |
More Detail: | N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface ... |
DataSheet: | ![]() |
Quantity: | 2500 |
1 +: | $ 0.22000 |
10 +: | $ 0.21340 |
100 +: | $ 0.20900 |
1000 +: | $ 0.20460 |
10000 +: | $ 0.19800 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 846pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4134DY-T1-E3 is a high-speed, integrated circuit N-Channel MOSFET. It is commonly used in applications that require low impedance, high conductivity switching devices. This type of transistor is frequently used in motor control, high frequency switching, and audio and audiovisual systems.
The SI4134DY-T1-E3 is constructed of two terminals known as the source and the drain, and a single oxide layer that separates the two. This oxide layer is known as the gate oxide, and is responsible for controlling the amount of electrical current flowing between the source and drain. By varying the potential of the gate oxide, the current through the device can be controlled. This is what makes the SI4134DY-T1-E3 an ideal choice for low impedance applications that require fast switching.
The primary benefit of using the SI4134DY-T1-E3 is its low on-resistance (RDSon). This means that the voltage drop across the device is very small even when high currents are passed through it. Additionally, because the source and drain regions of the device are symmetrically deposited, it is possible to achieve balanced current flows. The combination of these features makes the SI4134DY-T1-E3 well suited for switching applications.
The SI4134DY-T1-E3 is also versatile because it can be operated in either depletion mode (which allows current to flow freely) or enhancement mode (which requires an applied voltage to start the current flow). This makes it easier to use in a wide range of applications. It also offers high frequency operation thanks to its low gate capacitance and high speed switching capability.
In operation, the SI4134DY-T1-E3 functions as an electrical switch, allowing current to pass through it when an appropriate voltage is applied. The voltage is applied to the gate terminal - the potential difference between the gate and the source determines the amount of current allowed to flow. When the voltage is positive, the current flows from the source to the drain; and when the voltage is negative, the current flows from the drain to the source.
The SI4134DY-T1-E3 is designed to be used in many different applications. It is commonly used in high frequency switching, audio and audiovisual systems, and motor control. It is particularly useful for applications that require low impedance switching, as its low on-resistance allows for fast and efficient operation. Additionally, because of its symmetrical source and drain regions and ability to operate in both depletion and enhancement modes, it also offers high reliability and versatility.
The specific data is subject to PDF, and the above content is for reference
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