SI4134DY-T1-E3 Allicdata Electronics

SI4134DY-T1-E3 Discrete Semiconductor Products

Allicdata Part #:

SI4134DY-T1-E3TR-ND

Manufacturer Part#:

SI4134DY-T1-E3

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 14A 8-SOIC
More Detail: N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface ...
DataSheet: SI4134DY-T1-E3 datasheetSI4134DY-T1-E3 Datasheet/PDF
Quantity: 2500
1 +: $ 0.22000
10 +: $ 0.21340
100 +: $ 0.20900
1000 +: $ 0.20460
10000 +: $ 0.19800
Stock 2500Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4134DY-T1-E3 is a high-speed, integrated circuit N-Channel MOSFET. It is commonly used in applications that require low impedance, high conductivity switching devices. This type of transistor is frequently used in motor control, high frequency switching, and audio and audiovisual systems.

The SI4134DY-T1-E3 is constructed of two terminals known as the source and the drain, and a single oxide layer that separates the two. This oxide layer is known as the gate oxide, and is responsible for controlling the amount of electrical current flowing between the source and drain. By varying the potential of the gate oxide, the current through the device can be controlled. This is what makes the SI4134DY-T1-E3 an ideal choice for low impedance applications that require fast switching.

The primary benefit of using the SI4134DY-T1-E3 is its low on-resistance (RDSon). This means that the voltage drop across the device is very small even when high currents are passed through it. Additionally, because the source and drain regions of the device are symmetrically deposited, it is possible to achieve balanced current flows. The combination of these features makes the SI4134DY-T1-E3 well suited for switching applications.

The SI4134DY-T1-E3 is also versatile because it can be operated in either depletion mode (which allows current to flow freely) or enhancement mode (which requires an applied voltage to start the current flow). This makes it easier to use in a wide range of applications. It also offers high frequency operation thanks to its low gate capacitance and high speed switching capability.

In operation, the SI4134DY-T1-E3 functions as an electrical switch, allowing current to pass through it when an appropriate voltage is applied. The voltage is applied to the gate terminal - the potential difference between the gate and the source determines the amount of current allowed to flow. When the voltage is positive, the current flows from the source to the drain; and when the voltage is negative, the current flows from the drain to the source.

The SI4134DY-T1-E3 is designed to be used in many different applications. It is commonly used in high frequency switching, audio and audiovisual systems, and motor control. It is particularly useful for applications that require low impedance switching, as its low on-resistance allows for fast and efficient operation. Additionally, because of its symmetrical source and drain regions and ability to operate in both depletion and enhancement modes, it also offers high reliability and versatility.

The specific data is subject to PDF, and the above content is for reference

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