SI4170DY-T1-GE3

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The SI4170DY-T1-GE3 is a MOSFET field effect transistor from Vishay. It is designed for applications requiring high-efficiency, high input impedance, and low drain-source voltage. Due to its low RDS(on), this device is ideal for use in switching, process control, and high-speed communication applications.

The device is a dual N-channel, depletion-mode fully-enhanced MOSFET and is available in three different low-voltage packaging options: the TO-263 AB, LT, and ST. It has a breakdown voltage (VBR) of 30V and an on-resistance of 0.167 Ω, making it suitable for high current applications.

The SI4170DY-T1-GE3 has two main components: a source terminal and a gate terminal. The source terminal is connected to the source voltage and the gate terminal is connected to the gate voltage. When the gate voltage is larger than a certain threshold, the MOSFET is driven into the linear region, allowing current to flow from the source to the drain. The device is designed to keep the gate voltage low in order to keep the device in the off state.

The SI4170DY-T1-GE3 can operate over a wide range of temperature, from -55°C to +150°C, making it suitable for use in harsh environments. It is also capable of handling high surge current up to 40A with a pulsed drain current rating of 80A.

The SI4170DY-T1-GE3 is suitable for use in a wide range of applications, including power conversion, remote sensing, switch control, level shifters, power control, intelligent control, and motor control. It is also used in the automotive sector, such as fuel injectors, ABS systems, airbags, power steering, and power windows.

The SI4170DY-T1-GE3 is designed to operate under a variety of conditions and provide a reliable operation for long periods of time. It also offers excellent protection against any short circuit and is capable of handling large transient current spikes.

The SI4170DY-T1-GE3 is a versatile MOSFET and can be used in a variety of applications. It is a reliable and efficient device, capable of providing high efficiency, low input impedance, and low drain-source voltage. Its low on-resistance and wide temperature range make it suitable for many applications.

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