SI5504DC-T1-E3 Discrete Semiconductor Products

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The SI5504DC-T1-E3 is a voltage-controlled 3-stage CMOS switch array with programmable ON resistances suitable for digital and analog radio frequency applications. It consists of three independently controlled N-channel metal-oxide-semiconductor (NMOS) switches. Each stage has an ON resistance that can be programmed from 0.2Ω up to 75Ω, allowing for accurate impedance matching. The first two stages are constructed from independent N-channel FETs with a third CMOS-controlled N-channel FET. The third stage is an N-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) with a junction field-effect transistor (JFET) gate structure.

The SI5504DC-T1-E3 has the ability to deliver up to 4A of current. It is packaged in a thermally enhanced package and is available in the industry-standard, lead-free, 20-lead TSSOP package. It also features an active variable frequency compensation and is rated for a maximum Vcc of 5.25 V and a frequency range of 20 kHz to 500 MHz.

The device can be used in a variety of applications, such as variable frequency oscillators, mixers, and transceivers. It is well-suited for digital and analog radio frequency applications, such as amplifiers, demodulators, and phase shifters. The SI5504DC-T1-E3 is also suitable for applications that require a precise and low-cost impedance matching solution for RF paths.

The SI5504DC-T1-E3\'s working principle is based on a combination of two proven technologies: high-level MOSFETs and CMOS digital logic. High-level MOSFETs are used to switch between the digital and analog states, while CMOS digital logic is used to set the impedance levels by adjusting the bias voltages appropriately. The device is voltage-controlled and can be programmed to a specific value over the range of 0.2Ω to 75Ω. The bias voltage can be adjusted on each stage independently to obtain an ideal impedance match and function as a switch to route the signals. The device offers a low power consumption and a high level of integration and flexibility.

The SI5504DC-T1-E3 is an impressive device, combining both the low-level electrical and high-level digital performance of traditional CMOS FETs with the precision and accuracy of complex digital logic. Its wide voltage and frequency range make it ideal for digital and analog radio frequency applications. Its low power consumption and ability to program its impedance make it an ideal solution for impedance matching applications.

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