SI5517DU-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI5517DU-T1-E3TR-ND |
Manufacturer Part#: |
SI5517DU-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V 6A CHIPFET |
More Detail: | Mosfet Array N and P-Channel 20V 6A 8.3W Surface M... |
DataSheet: | SI5517DU-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | SI5517 |
Supplier Device Package: | PowerPAK® ChipFet Dual |
Package / Case: | PowerPAK® ChipFET™ Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 8.3W |
Input Capacitance (Ciss) (Max) @ Vds: | 520pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 4.4A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5517DU-T1-E3 is a dual complementary non-isolated MOSFET driver array, which offers a variety of features that make it suitable for a wide range of applications. Originally designed for driving and fast switching applications, the driver array can be used as either a stabilizer or amplifier, and can be used in combination with an external voltage amplifier to enhance its performance. The array contains a pair of complementary MOSFETs, which are connected in parallelby means of a common gate. Each MOSFET is controlled by an independent gate voltage, and can be switched on or off by applying an appropriate voltage to the corresponding gate.
In terms of its application field, the SI5517DU-T1-E3 can be used in applications such as low voltage motor drives, stabilized power supplies, and DC/DC buck converters. Additionally, it can be used in automotive consoles, battery charging systems, and fan speed controllers. The driver array has a maximum output current of 10 mA and a maximum gate charging voltage of 30 V.
The working principle of the SI5517DU-T1-E3 is based on the process of conduction, in which current is transferred between two MOSFETs. In order for conduction to occur, both MOSFETs must have their gates in complementary states of low and high. The SI5517DU-T1-E3 driver array ensures this state of conduction by connecting the two MOSFETs’ gates through a common terminal. The applied voltage then sets the respective gate voltage of both MOSFETs, allowing for the desired current to flow between them. In addition, the driver array actively monitors the gate voltages and ensures that both remain in the correct state for optimal performance and efficiency.
The SI5517DU-T1-E3 driver array is a versatile and highly efficient product, which can be used in a wide variety of applications. Its combination of excellent performance and ease of use makes it an ideal choice for those looking for a reliable and efficient MOSFET driver array.
The specific data is subject to PDF, and the above content is for reference
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