SI5519DU-T1-GE3

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The SI5519DU-T1-GE3 is a power MOSFET array that comprises two N-channel enhancement mode MOSFETs. It is the latest addition to Vishay’s continuously expanding array of products for the industrial, automotive, military, and consumer markets. This array employs a low voltage process and delivers extremely low on-state resistance with a low gate drive requirement. It is manufactured in a 3-pin single-inline surface mount package with the pins connected in a daisy-chain configuration. This array offers a maximum drain-source breakdown voltage of 30 V and a maximum current rating of 3.2 A.

The SI5519DU-T1-GE3 has a variety of applications as it is a versatile array perfect for use in power amplifiers, power supplies, high-speed switching, motor control, and high voltage voltage regulators. This array has been designed for use in high current, high power applications and is suitable for a wide range of operating frequencies. This array can be operated in the temperature range of -55°C to 150°C, making it suitable for most environmental conditions.

The SI5519DU-T1-GE3 array works by utilizing a low-voltage trigger signal to turn on and off the two N-channel MOSFETs. The array has an internal anti-saturation protection circuit which prevents the FETs from suffering secondary breakdown. This feature helps to prolong the life of the MOSFETs in the array. The array has a low on-state resistance of 6 mΩ (typical value) and a low gate drive requirement of 3.2V (max), making it suitable for high-speed switching applications.

The SI5519DU-T1-GE3 array is an ideal choice for those looking for a reliable, efficient, and versatile array for their power applications. With its low voltage process, low on-state resistance, low gate drive requirement, and wide operating temperature range, this MOSFET array is perfect for use in a variety of high current and power applications. Its integrated anti-saturation protection circuit makes it even more desirable for those seeking long-lasting, reliable performance from their device.

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