SI5504DC-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI5504DC-T1-GE3 is an industrial range, Standard Level MOSFET array. It\'s a high-side, and low-side device consist of two n-channel power MOSFETs with maximum channel ratings of 50V and 8A. This device offers best in class, low on-resistance performance, low gate charge and low reverse transfer capacitance. It is easily set up and controlled and offers four preset current rating options to eliminate the need for external components.

The SI5504DC-T1-GE3 can be used for many applications. It can be used for motor control, DC-DC converters, load switching, motor speed control and pulse-width-modulation (PWM). It is also used for converting and regulating AC power, audio amplifiers, switched-mode power supplies, and power factor correction circuits. It is suitable for many robot and electrical applications including driving LED\'s and motors, temperature control, repetitive pattern detection, and industrial and automotive applications.

The SI5504DC-T1-GE3 array works on a low voltage supply voltage, which makes it ideal for use in low voltage applications. It can handle high peak currents and its low on-resistance makes it suitable for switching applications. Its fast switching capability results in a low distortion factor, making it suitable for power management applications. It also has excellent thermal performance and low power consumption.

The SI5504DC-T1-GE3 is constructed with a control electronics die, a power die and a package substrate. The power die is connected to the control electronics die via an interconnect, which enables the device to be used in a low voltage application. The power die contains two n-channel MOSFETs with maximum channel ratings of 50V and 8A each. The power die also contains a charge pump which is used to regulate the gate voltage. The device can be configured with two, three or four channels, which provides flexibility in application design.

The working principle of the Si5504DC-T1-GE3 is based on the MOSFET array. The control electronics die is responsible for the modulation of the power transistors, which can be done through PWM. The voltage that is generated is used to control the operation of the power MOSFETs which can be used to switch on or off the power transistor in order to control the current and voltage level of the output. The device can also be set up to switch between different current ratings which can be used for power saving applications.

In conclusion, the SI5504DC-T1-GE3 array is a highly efficient, low voltage power MOSFET array. It is perfect for applications that require low voltage operation and high current control. Its fast switching times make it suitable for use in power management applications, while its low on resistance performance makes it well suited for motor control applications. Its ease of use and flexibility make it the ideal choice for a wide range of applications including motor control, DC-DC converters, load switching, motor speed control and pulse-width-modulation.

The specific data is subject to PDF, and the above content is for reference