SI5509DC-T1-E3 Discrete Semiconductor Products |
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| Allicdata Part #: | SI5509DC-T1-E3TR-ND |
| Manufacturer Part#: |
SI5509DC-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N/P-CH 20V 6.1A 1206-8 |
| More Detail: | Mosfet Array N and P-Channel 20V 6.1A, 4.8A 4.5W S... |
| DataSheet: |  SI5509DC-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Base Part Number: | SI5509 |
| Supplier Device Package: | 1206-8 ChipFET™ |
| Package / Case: | 8-SMD, Flat Lead |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 4.5W |
| Input Capacitance (Ciss) (Max) @ Vds: | 455pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.6nC @ 5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 52 mOhm @ 5A, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 6.1A, 4.8A |
| Drain to Source Voltage (Vdss): | 20V |
| FET Feature: | Logic Level Gate |
| FET Type: | N and P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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SI5509DC-T1-E3 is a transistor array device that is available in the form of a chip. It is primarily used in applications such as motor control and power management. In order to understand its working principle and application field, it is important to understand the different components of this device. The SI5509DC-T1-E3 transistor array consists of three different types of transistors: the n-channel MOSFET (metal-oxide-semiconductor field-effect transistor), the p-channel MOSFET, and the dual logic gate. The transistors are arranged in a "T1" configuration, which is also known as a three-stage shift register. This allows for the construction of a device that can be used for different types of operations. The n-channel MOSFETs are used for switching, while the p-channel MOSFETs are used for amplifying. The dual logic gate provides the logic for the device to operate properly. The two logic gates are the input and output logic, which provide the necessary signals for carrying out the desired operations. The SI5509DC-T1-E3 is used in applications such as motor control and power management. It is used to control the speed and direction of motors, as well as providing power management in systems. The device can be used in applications that require high-speed switching and power management. It is also used in power supply circuits. The device works by receiving an input voltage and then outputting the same voltage at a higher level. This is done with the help of the two logic gates, which receive the input voltage and output the same voltage at a higher level. The two logic gates, when combined, provide a high-speed switching operation. This is known as switching frequency modulation. In terms of application field, the SI5509DC-T1-E3 is used in applications such as motor control and power management. It is also used in applications that require the high-speed switching of power supplies. It is an ideal choice for applications where low power consumption and circuit space are a priority. To summarize, the SI5509DC-T1-E3 is a transistor array device available in the form of a chip. It consists of three different types of transistors: the n-channel MOSFET, the p-channel MOSFET, and the dual logic gate. It is used in applications such as motor control and power management, as well as other applications that require high-speed switching and power management.
The specific data is subject to PDF, and the above content is for reference
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