SI5513CDC-T1-E3 Discrete Semiconductor Products

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The SI5513CDC-T1-E3 is a type of flat-pack, low-power, and low-saturation voltage N-Channel enhancement mode MOSFET, specifically designed for an array of wide-ranging consumer, industrial, and communication applications. This device is highly reliable and cost-effective due to its integration of advanced process technologies and design features. The SI5513CDC-T1-E3 is a great choice for digital consumer and automotive applications, such as power switches, audio amplifiers, digital displays, audio/video switches, and others.

The SI5513CDC-T1-E3 comes with a 135V, 700mA fast-switching capability, ensures reliable operation on digital systems with low input capacitance. The device also provides high ESD protection with a low on-resistance of 2000mOhms at Vgs=10V and low saturation voltage of 500mV at a current of 700mA, making it a cost-effective solution for applications where low power consumption and high reliability are required. This device is also characterized with soft turn-on re-driver ICs to provide improved reliability and stability for high frequency AC and DC switching applications.

The working principle of the SI5513CDC-T1-E3 is based on the enhancement mode MOSFET process. This type of technology uses the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) to regulate voltage and current in circuits. It consists of two primary components–the Gate-Source capacitor and the Drain-Source capacitor. The Gate-Source capacitor works as an insulating governing barrier between the Gate and Source, while the Drain-Source capacitor acts as an uninterrupted electrical signal conductor between the Drain and Source.

When the device is turned on, the Gate-Source capacitor is pulled along with the Source voltage and the channel is closed, creating an open-circuit path between the Gate-Source. This stops the flow of current from the Gate to the Source, which virtually shuts off the MOSFET. When the device is turned off, the Drain-Source capacitor is pulled along with the Drain voltage, creating a closed circuit between the Drain-Source, thus allowing current to flow.

The SI5513CDC-T1-E3 is ideal for applications such as power switch, audio amplifiers, digital displays, audio/video switches and other low power consumers. Its fast-switching capability and low saturation voltage integrate features to provide high reliability and cost-effectiveness in digital systems. With its integrated process technologies and design features, users can confidently use the SI5513CDC-T1-E3 to meet their specific needs.

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