SI5515DC-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI5515DC-T1-E3 is a power MOSFET array specifically designed to provide excellent RDS(on) performance and improved layout flexibility over standard power MOSFETs. The SI5515DC-T1-E3 is a N-channel MOSFET array comprised of four MOSFETs in a single package, with a total on-resistance of 15 ohms. The SOIC-8 packaged device is compatible with a variety of applications, including those with tight space constraints.

Application Field

The SI5515DC-T1-E3 is most commonly used for power management applications, specifically for switching in power supplies and DC-DC converters. The device’s low on-resistance and high frequency operation also make it well-suited for a variety of other power-switching applications, such as general purpose H-bridges, motor control, charge pumps, high voltage motor drives, and LCD panel supplies. The SI5515DC-T1-E3 is an ideal addition to any circuit requiring multiple MOSFETs.

Working Principle

A power MOSFET array, like the SI5515DC-T1-E3, is made up of four individual MOSFETs connected in parallel. Each of the four MOSFETs has an associated source, gate, and drain. The source is used to attach the power to the MOSFET, the gate is used to control current flow, and the drain is used to draw current from the MOSFET. Depending on the logic level of the gate voltage, the current flowing through a single MOSFET will either be close to zero (for a LOW gate voltage), or the resistance of the channel (for a HIGH gate voltage). In this way, the gate voltage of the MOSFET can be used to control the current flowing out of the source or into the drain of the array.

When an array is switched on, all four MOSFETs will be turned on, allowing current to flow from the source to the drain of the array. As the four MOSFETs are connected in parallel, the total drain-to-source resistance of the array will be equal to the sum of the resistance of each of the individual MOSFETs. This makes for very low on-resistance values and improved layout flexibility, as the total resistance can be controlled by adjusting the value of a single MOSFET.

The SI5515DC-T1-E3 is rated for a total on-resistance of 15 ohms, making it one of the lowest on-resistance arrays available. The MOSFETs also feature a 150kHz switch frequency, allowing them to operate at higher frequencies than other similar devices. And with its small package size, the SI5515DC-T1-E3 is an excellent choice for applications where space constraints are a concern.

In summary, the SI5515DC-T1-E3 is a low on-resistance MOSFET array ideal for power switching applications. The array features four individual MOSFETs connected in parallel, allowing for low total on-resistance and a high switch frequency. The device’s small size and low on-resistance make it a good choice for applications where space and power efficiency are a priority.

The specific data is subject to PDF, and the above content is for reference