SI5511DC-T1-E3 Allicdata Electronics

SI5511DC-T1-E3 Discrete Semiconductor Products

Allicdata Part #:

SI5511DC-T1-E3TR-ND

Manufacturer Part#:

SI5511DC-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 30V 4A 1206-8
More Detail: Mosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2....
DataSheet: SI5511DC-T1-E3 datasheetSI5511DC-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Base Part Number: SI5511
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 2.6W
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SI5511DC-T1-E3 is a type of Field Effect Transistor (FET) array which is composed of Field Effect Transistors (FETs) and has the capability to control multiple FETs. This type of FET is used to provide a very fast switching function to be used in various applications. It is composed of three FETs and two resistors, making it very compact and capable of carrying out various functions.

The unique feature of SI5511DC-T1-E3 is that it provides a dual polarity type of operation. This includes the ability to switch both the positive and the negative side of the FET simultaneously and do so with a very low on resistance. This makes the SI5511DC-T1-E3 ideal for applications such as high speed and low voltage power management including motor control, gate drive and low-voltage analog circuit control.

The working principle of SI5511DC-T1-E3 is based on two type of operation. The first one is based on the logic level and is mainly used for switching on/off a FET or controlling its voltage or current. In this type of application, the logic inputs are connected to a logic level control circuit and the FET gates are connected to the logic input. When the logic input voltage is high, the FETs will conduct and the voltage potential across the FET is lowered, thus turning it on.

The second type is based on the analog level and is mainly used for low resistance and low noise operation. In this type, the resistors are connected to the outputs of the FET, allowing the FETs to be driven with a linear voltage. This type of operation is usually used for noise sensitive applications such as low Voltage and low power management.

In summary, SI5511DC-T1-E3 is a type of FET array composed of three FETs and two resistors. It offers dual polarity control with a very low on resistance, making it perfect for high speed and low voltage power applications. It can operate using two types of operations: logic level for switching a FET on/off and analog level for low resistance and low noise operation.

The specific data is subject to PDF, and the above content is for reference

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