SI5515CDC-T1-E3 Discrete Semiconductor Products |
|
Allicdata Part #: | SI5515CDC-T1-E3TR-ND |
Manufacturer Part#: |
SI5515CDC-T1-E3 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V 4A 1206-8 |
More Detail: | Mosfet Array N and P-Channel 20V 4A (Tc) 3.1W Surf... |
DataSheet: | SI5515CDC-T1-E3 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.22061 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Base Part Number: | SI5515 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.1W |
Input Capacitance (Ciss) (Max) @ Vds: | 632pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 6A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction: The SI5515CDC-T1-E3 is a dense array of three fully-differential N-channel MOSFET stages in a single-package. The device is suited for signal conditioning applications in digital and analog audio systems. It is offered in a 20-pin TSSOP package for space-saving applications, and features high input and output impedance, along with low offset voltage characteristics. This application will explore the field and working principles of the SI5515CDC-T1-E3.
Field of Application: The SI5515CDC-T1-E3 has been developed to address the demands of high-performance, low-power signal conditioning applications. It has been designed to meet the needs of a wide range of signal conditioning applications, such as audio amplifiers, battery packs, and portable medical devices. It is well-suited for applications such as bridge amplifiers and signal generators, as well as signal sensing and conditioning, due to its low-power operation and high levels of integration. The device can also be used in distributed data acquisition systems and digital signal processors. Moreover, due to its wide frequency response range, the device can be used in applications requiring high frequency accuracy and low-noise performance.
Working Principle: The SI5515CDC-T1-E3 is a three-stage fully-differential N-channel MOSFET array, which consists of three differential input pairs, each of which has two outputs: one for a source and one for a drain. The device has a high input impedance, low output impedance, and low offset voltage for very high performance. In operation, the device applies an input signal to one of its three differential input pairs and provides an output signal that is an amplified version of the input signal. This amplified output signal is then connected to the next stage of the system. This process is repeated until the desired signal amplification is obtained. Moreover, the device has a wide frequency response range and a very low noise performance.
Conclusion: The SI5515CDC-T1-E3 is an integrated three-stage N-channel MOSFET array, offering high performance and low power operation. The device is well-suited for a variety of signal conditioning applications, including bridge amplifiers, signal generators, signal sensing and conditioning, audio amplifiers, battery packs, digital signal processors, and distributed data acquisition systems. It has a wide frequency response range and low noise performance, making it particularly suitable for applications requiring high frequency accuracy and low-noise performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI5504DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 2.9A 12... |
SI5509DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 6.1A 12... |
SI5511DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 30V 4A 1206... |
SI5513DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 3.1A 12... |
SI5517DU-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 6A CHIP... |
SI5519DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 6A CHIP... |
SI5513CDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 4A 1206... |
SI5515DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N/P-CH 20V 4.4A 12... |
SI5511DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 4A 1206... |
SI5504DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 2.9A 12... |
SI5509DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 6.1A 12... |
SI5513DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 3.1A 12... |
SI5515DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 4.4A 12... |
SI5513CDC-T1-GE3 | Vishay Silic... | -- | 27000 | MOSFET N/P-CH 20V 4A 1206... |
SI5504BDC-T1-GE3 | Vishay Silic... | 0.33 $ | 6000 | MOSFET N/P-CH 30V 4A 1206... |
SI5515CDC-T1-E3 | Vishay Silic... | 0.25 $ | 3000 | MOSFET N/P-CH 20V 4A 1206... |
SI5504BDC-T1-E3 | Vishay Silic... | -- | 48000 | MOSFET N/P-CH 30V 4A 1206... |
SI5517DU-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N/P-CH 20V 6A CHIP... |
SI5515CDC-T1-GE3 | Vishay Silic... | -- | 1079 | MOSFET N/P-CH 20V 4A 1206... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...