Allicdata Part #: | SI5509DC-T1-GE3-ND |
Manufacturer Part#: |
SI5509DC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V 6.1A 1206-8 |
More Detail: | Mosfet Array N and P-Channel 20V 6.1A, 4.8A 4.5W S... |
DataSheet: | SI5509DC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Base Part Number: | SI5509 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 4.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 455pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.6nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.1A, 4.8A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5509DC-T1-GE3 is an integrated circuit (IC) used in many circuit applications. In the technology industry, it is commonly used as a high-voltage n-channel field-effect transistor (FET) array. It has the ability to switch large voltages with low capacitance, and is generally used in applications that require high level of accuracy, such as in operational amplifiers, signal processors, and drivers.The SI5509DC-T1-GE3 is composed of 10 parallel FETs, each with a high-side and low-side gate control input. The FETs are arranged in such a way that they can be alternately activated or deactivated in order to switch voltages from one side to another. This feature makes it ideal for applications that require a level of protection from current overloads or for applications that require an efficient power switching device.The FET array is also capable of being driven by an external bias voltage, allowing for further control over the switching feature. It also features a low on-resistance, making it more energy-efficient than other FETs in the same range. Furthermore, the FET array also features built-in logic gates and protection components, making it less prone to failure caused by electrical surges or other extreme conditions.In terms of its application in various fields, the SI5509DC-T1-GE3 is also widely used in telecommunications, robotics, and electrical engineering. It is often used in telecommunications to control power and switching functions, allowing more reliable connections. In robotics, this FET array provides control over speed and acceleration for the robot\'s motors and wheels. In electrical engineering, it can be used to regulate voltages and switch signals for the device.In terms of its working principle, the SI5509DC-T1-GE3 works by first sensing the voltage level of an electrical circuit. It then converts this voltage into a digital signal which is sent to the FET array. This allows the switches in the FET array to be controlled, allowing for the transfer of signals from one side to the other, or from one voltage level to another. The IC also includes a timer circuit that can be used to time the FETs and their current regulation.Overall, the SI5509DC-T1-GE3 is a powerful and efficient field-effect transistor array with many applications in the technology industry. Its low on-resistance, high switching speed, and internal protection features make it the ideal choice for many circuit applications that require precision control.
The specific data is subject to PDF, and the above content is for reference
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