SI5515CDC-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI5515CDC-T1-GE3TR-ND |
Manufacturer Part#: |
SI5515CDC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V 4A 1206-8 |
More Detail: | Mosfet Array N and P-Channel 20V 4A 3.1W Surface M... |
DataSheet: | SI5515CDC-T1-GE3 Datasheet/PDF |
Quantity: | 1079 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Base Part Number: | SI5515 |
Supplier Device Package: | 1206-8 ChipFET™ |
Package / Case: | 8-SMD, Flat Lead |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.1W |
Input Capacitance (Ciss) (Max) @ Vds: | 632pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 6A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI5515CDC-T1-GE3 is a part of the Si5515 family of High-Voltage N-Channel MOSFET Arrays from Vishay Siliconix. It is a high-voltage, low-RDS(on) power MOSFET solution that has two parallel N-channel MOSFETS in an SO-8 package, making it an ideal power solution for a wide range of applications. The SI5515CDC-T1-GE3 is designed to provide reliable power delivery performance in applications that require high power delivery, such as lighting, motor control, and industrial automation.
The SI5515CDC-T1-GE3 is able to provide low on-state resistance, high frequency and high surge current, making it a great choice for high power applications. It has an on-resistance of 6.5mΩ, a maximum gate threshold voltage of 10V, and a maximum drain-source voltage of 60V. The maximum peak current rating is 40A, and the maximum operating temperature is 150°C.
The key to the performance of the SI5515CDC-T1-GE3 is its low on-state resistance and high-frequency switching performance. Its low on-state resistance enables it to provide efficient power delivery and maintain low power losses. The high-frequency switching performance of the SI5515CDC-T1-GE3 allows it to operate at high frequencies and provide quick response times, making it suitable for a wide range of applications.
In terms of applications, the SI5515CDC-T1-GE3 is perfect for use in lighting, motor control and industrial automation applications. It is also suitable for power supply design and audio amplifiers. Its fast switching performance and low on-state resistance makes it perfect for these applications.
In terms of working principle, the SI5515CDC-T1-GE3 is an N-Channel enhancement mode MOSFET. It works by using a voltage applied to the drain terminal to control the flow of current in the channel. When an active voltage is applied to the gate of the MOSFET, it allows current to flow from the drain to the source. The amount of current that flows depends on the voltage applied to the gate and the on-state resistance of the device.
The SI5515CDC-T1-GE3 is a great solution for high-power applications. Its low on-state resistance, high frequency switching performance and high surge current ratings make it perfect for a wide range of applications. The Vishay Siliconix SI5515CDC-T1-GE3 is a reliable and cost-effective solution for high power delivery.
The specific data is subject to PDF, and the above content is for reference
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