SI9407BDY-T1-E3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.4W (Ta), 5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	600pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	120 mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4.7A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The SI9407BDY-T1-E3 is a single N-channel enhancement-mode Field Effect Transistor (FETs) specially designed as an alternative to standard power MOSFETs in applications such as motor control, high voltage gate drivers, and industrial power conversion. It offers a wide range of features, including low on-resistance, low gate threshold voltage, and fast switching speed. The SI9407BDY-T1-E3 is designed with a Kelvin source lead and has an integrated ESD protection diode for excellent ESD protection. This device is fabricated using the very latest vertical double-diffused MOSFET (VMOS) process technology, allowing low parasitic inductance and ESR compared to other FETs. The SI9407BDY-T1-E3 is designed for a gate voltage of -4.5 to -14 volts, drain current of -60 to -100 amps, a drain-source voltage of -100V, and a drain-gate voltage of -100V. Its maximum junction temperature rating is 180°C. The working principle of a FET is similar to that of a bipolar transistor, however their construction and operation differ in several key ways. Unlike actual transistors, which control a voltage on one side but pass a current on the other side, FETs pass a voltage on both sides. In addition, Field Effect Transistors are licensed under two charge carriers: electrons and holes, while a bipolar transistor requires only a single charge carrier. The way a FET works is based on the principle of an electric field. The electric field is created across the gate of a FET to induce a current between the source and the drain. This current is called the “inversion layer” current. The electric field created by the gate voltage is what controls the current flow of the device. The amount of current that the SI9407BDY-T1-E3 FET can flow through the device is proportional to the gate voltage, and is related to the gate charge Qs. Gate charge (Qs) is a measure of the amount of charge needed to raise the gate voltage from its minimum threshold voltage (Vth) to the desired operating voltage. The higher the gate charge, the more current the FET can support. The SI9407BDY-T1-E3 FET is an ideal solution for applications that require very fast switching speeds and low resistance. The device features a very low threshold voltage (Vth) and a fast switching speed, allowing for high power conversion efficiency. The FET can also be used in applications such as motor control, high voltage gate drivers, and industrial power conversion to switching various loads with high efficiency. The integrated ESD protection diode also enhances robustness in industrial applications. It is important to realize that, while this device is durable and reliable, it still requires a proper layout and gate driving circuitry to ensure optimum performance. In conclusion, the SI9407BDY-T1-E3 is a single N-channel enhancement-mode Field Effect Transistor that offers a wide range of features, including low on-resistance, low gate threshold voltage, and fast switching speed. It is the perfect solution for applications such as motor control, high voltage gate drivers, and industrial power conversion that require very fast switching speeds and low resistance. The integrated EDS protection diode enhances robustness in industrial applications. However, it is necessary to have a proper layout and gate driving circuitry to ensure optimal performance.

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