SI9433BDY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI9433BDY-T1-GE3TR-ND |
Manufacturer Part#: |
SI9433BDY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 4.5A 8-SOIC |
More Detail: | P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-... |
DataSheet: | SI9433BDY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 6.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI9433BDY-T1-GE3 is a N-ch enhancement mode field-effect transistor (FET). It’s a single MOSFET which is a switch or amplifier device operating on bi-directional electrical signals. The SI9433BDY-T1-GE3 is part of a larger family of MOSFETs which are often used in low-voltage, low-power, radio-frequency (RF) applications such as mobile phones and wireless adapters.
MOSFETs stand for metal-oxide-semiconductor field effect transistors and are used when switching voltages in electronic devices. They are incredibly versatile, reliable, and have minimal risk of damage. They are usually much smaller and cheaper than other switching technologies and the SI9433BDY-T1-GE3 is a great example of a small and reliable switch.
The SI9433BDY-T1-GE3 has a drain-source voltage rating of 33V and a maximum gate-source voltage rating of 40V. Its drain current rating is 500mA and its power dissipation rating is 7W. This device can operate in temperatures ranging from -55°C to 150°C and is available in a variety of lead and package types.
The main purpose of the SI9433BDY-T1-GE3 is to switch an electrical signal. A MOSFET consists of two components - a gate and a drain. The gate is analogous to an open-close switch, while the drain is analogous to an amplifier. When a positive voltage is applied to the gate, the MOSFET is turned on, allowing electrical current to pass from the drain to the source. When a negative voltage is applied to the gate, the MOSFET is turned off and no current can flow through the device. This bi-directional electrical signal can be a current, voltage, light, sound, or other type of signal.
In addition to switching an electrical signal, the SI9433BDY-T1-GE3 can also amplify a signal. When the device is turned on, the current through the device can be controlled by varying the magnitude of the gate voltage. This allows for a range of outputs that depends on the voltage applied. This feature makes the SI9433BDY-T1-GE3 an excellent choice for amplifying signals with low-power, low-voltage applications such as mobile phones and wireless adapters.
The SI9433BDY-T1-GE3 is a reliable and versatile single MOSFET with a wide range of applications. It can be used as a switch or amplifier device in low-power, low-voltage applications where reliability and minimal power dissipation is desired. It is a great choice for applications such as mobile phones, wireless adapters, and other smaller electronic devices.
The specific data is subject to PDF, and the above content is for reference
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