| Allicdata Part #: | SI9407BDY-T1-GE3TR-ND |
| Manufacturer Part#: |
SI9407BDY-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 60V 4.7A 8-SOIC |
| More Detail: | P-Channel 60V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface... |
| DataSheet: |  SI9407BDY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.4W (Ta), 5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 120 mOhm @ 3.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SI9407BDY-T1-GE3 is a type of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). It is a single gate transitor designed for general purpose applications. This component has a drain current rating of 25 amps, a drain-source voltage rating of 300 volts, and a gate-source voltage rating of 20 volts. The device has a maximum junction temperature of 150 degrees Celsius, a maximum power dissipation of 65 watts, and a thermal resistance of 100 degrees Celsius/Watt.The SI9407BDY-T1-GE3 is constructed using the N-Channel MOSFET technology. This means that when a positive voltage is applied to the gate, the transistor turns on, allowing current to flow from drain to source. The positive voltage also increases the channel width, resulting in increased current flow. Conversely, when a negative voltage is applied to the gate, the transistor turns off, preventing current from flowing.There are several key characteristics which set the SI9407BDY-T1-GE3 apart from other MOSFETs. It has an extremely low input capacitance and very low power consumption which make it an ideal choice for applications that require high switching frequencies and low power consumption. It also has a high breakdown voltage and high operating temperature, making it well-suited for applications that require high power dissipation and operating temperatures.The SI9407BDY-T1-GE3 can be used in a variety of applications. It is often used as a high-speed switch, as it can allow for higher switching frequencies than traditional MOSFETs can. It can also be used in power management systems, as it is capable of handling higher voltages and dissipation levels than other MOSFETs are. It can also be used as a linear gate driver in systems that require a higher amount of current from the gate.Due to its low input capacitance and low power consumption, the SI9407BDY-T1-GE3 is well-suited for high-frequency switching applications. Its high breakdown voltage and high operating temperature make it a great choice for power management systems and allows for decreased power consumption, improved system reliability and increased life of the system. In addition, its low power consumption and high operating temperature make it a great choice for linear gate drivers, allowing for a higher amount of current to be supplied to the gate.With its low input capacitance and low power consumption, as well as its high breakdown voltage and high operating temperature, the SI9407BDY-T1-GE3 is an extremely versatile MOSFET. Its wide range of applications, from high-speed switching to linear gate drivers, make it an invaluable component in any system.
The specific data is subject to PDF, and the above content is for reference
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