| Allicdata Part #: | SI9435DYTR-ND |
| Manufacturer Part#: |
SI9435DY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET P-CH 30V 5.3A 8-SOIC |
| More Detail: | P-Channel 30V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-... |
| DataSheet: |  SI9435DY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 5.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
Description
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The SI9435DY is an advanced, high power, Low-On-Resistance N-Channel enhancement mode MOSFET from Vishay Semiconductor. It is suitable for use in a wide range of applications, including switching, linear, and other power management areas. This MOSFET device offers high-performance performance, low-voltage operation, and low R DS(ON), making it an ideal choice for a wide range of applications. The SI9435DY is a N-Channel enhancement mode MOSFET which can be used to switch high voltages with very little power loss. It is a three-terminal, metal–oxide–semiconductor field-effect transistor, which offers advantages such as low-on-resistance, low voltage, and enhanced thermal and electrical performance. The advantage of using a MOSFET as opposed to a BJT is that the MOSFET can be used with both high-voltage and low-voltage signals, making it suitable for both AC and DC applications. The SI9435DY is a high power MOSFET, which means that it is capable of handling larger currents and higher voltages than the standard MOSFET. It has an on-resistance of 0.03Ω, allowing it to switch high voltages with minimal power loss. The device is also rated for a maximum drain-source voltage of 100V, making it capable of handling high-voltage applications. The SI9435DY is a very versatile device, which can be used in a wide range of applications, including switching, linear, and other power management areas. It can be used for switching low-voltage, high-frequency signals, as well as for controlling large currents in high voltage applications. It can also be used to provide local power supplies for portable devices, as well as for providing reliable, high-speed switching in telecom, computer, and other electronics systems. The working principle of the SI9435DY is that of a MOSFET. It is typically used in a voltage-controlled configuration, in which the device acts as a switch or amplifier, depending on the input voltage applied. When the input voltage is low, the device acts as a low-on-resistance switch, allowing current to flow through the device in a given direction. This is known as an N-Channel MOSFET configuration. Conversely, when the input voltage is high, the device acts as a high-on-resistance switch, preventing current from flowing through the device. This is known as a P-Channel MOSFET configuration. The SI9435DY is a high power MOSFET which is suitable for a wide variety of applications due to its high power, low on-resistance, and high voltage capabilities. It can be used as an amplifier or switch, depending on the input signal, making it an ideal choice for power management, switching, and linear applications.
The specific data is subject to PDF, and the above content is for reference
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