| Allicdata Part #: | SI9424BDY-T1-GE3-ND |
| Manufacturer Part#: |
SI9424BDY-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 20V 5.6A 8SOIC |
| More Detail: | P-Channel 20V 5.6A (Ta) 1.25W (Ta) Surface Mount 8... |
| DataSheet: |  SI9424BDY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 850mV @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.25W (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±9V |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 7.1A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 5.6A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SI9424BDY-T1-GE3 is a high-performance, depletion-mode, ultra low-on-resistance, n-channel power MOSFET transistor. It is typically used as a switching device in consumer, telecommunications, automotive, and power management applications. This device features a very low on-resistance (RDS(on)) of 0.438Ω max at 10V, making it suitable for high-current applications. Additionally, the device features an avalanche rated dV/dt of 50V/ns, which makes it ideal for high-speed switching in power management applications.
The device has three pins, namely the drain, source and gate. The source and drain are the two terminals through which electrical current is directed to and from the device. The gate terminal is used to control the flow of current through the device by providing the necessary gate-source voltage. The device works by controlling the current flow through the channel formed between the source and the drain depending on the voltage at the gate. When there is no voltage applied to the gate terminal, the device acts as an open switch and no current flows through the channel. However, when a voltage is applied to the gate, it turns the device into a closed switch and current flows through the channel.
The SI9424BDY-T1-GE3 device is an excellent choice for consumer, communications, automotive, and power management applications because of its low on-resistance, high dV/dt and low gate drive requirement. Its low on-resistance and high dV/dt make it ideal for high-speed switching in power management applications. The device is also very robust and reliable, making it a good choice for long-term applications in harsh conditions.
The SI9424BDY-T1-GE3 device is also very cost effective for its performance. Its low cost makes it a great choice for applications where cost is a factor. In summary, the device is an ideal choice for high-performance, depletion-mode, power MOSFET applications.
The specific data is subject to PDF, and the above content is for reference
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