Allicdata Part #: | SI9410BDY-T1-E3TR-ND |
Manufacturer Part#: |
SI9410BDY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 6.2A 8SOIC |
More Detail: | N-Channel 30V 6.2A (Ta) 1.5W (Ta) Surface Mount 8-... |
DataSheet: | SI9410BDY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 8.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI9410BDY-T1-E3 is a P-channel enhancement mode MOSFET transistor manufactured by Vishay. It is capable of operating at a maximum drain-source voltage of −30 V, a maximum current of −4.4 A, and a maximum power dissipation of −1.6 W at a case temperature of 25 °C. This transistor is intended for use in both commercial and industrial applications, such as power management, load switching, amplifiers, audio, and motor control.
The basic operating principle of a semiconductor device like the SI9410BDY-T1-E3 is that current conduction occurs when electrons tunnel through a barrier. This type of transistor is a field-effect transistor, or FET, which means that the electrons are controlled by an electric field rather than the gate current. The gate of a FET acts as an electric field that can be used to control the channel\'s conductivity and the magnitude of current that flows through the channel.
The SI9410BDY-T1-E3 is a single field-effect transistor, meaning that it has two main terminals: the gate and the drain. Applying a positive gate voltage relative to the drain turns the transistor ON, allowing current flow between the source and the drain. If the gate voltage is negative relative to the drain, the transistor is turned OFF and current cannot flow through. The gate also can act as an amplifier by controlling the current flowing through the drain.
In an industrial application, the SI9410BDY-T1-E3 can be used to control loads such as motors, solenoids, and relays. It can also be used as an amplifier by controlling the current flowing through the load, which can be adjusted by varying the voltage applied to the gate. This allows for efficient and accurate power distribution, as the amount of current flowing through the load can be precisely controlled.
In a commercial application, the SI9410BDY-T1-E3 can be used as a switching component for power management systems. By properly applying a voltage to the gate from the power management system, the current flowing through the load can be precisely controlled, allowing for efficient and accurate power distribution. It can also be used as an amplifier in audio systems, where the amount of current flowing through the speaker can be precisely controlled to produce the desired sound.
The SI9410BDY-T1-E3 is an efficient and reliable single field-effect transistor that can be used in a variety of applications. Its ability to precisely control the amount of current flowing through a load makes it an ideal choice for power management, audio, and motor control systems. Vishay’s high-quality manufacturing processes allow the SI9410BDY-T1-E3 to offer a maximum drain-source voltage of −30 V, a maximum current of −4.4 A, and a maximum power dissipation of −1.6 W at a case temperature of 25 °C.
The specific data is subject to PDF, and the above content is for reference
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