SI9424DY

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The SI9424DY is a P-channel enhancement-mode power MOSFET produced in a thin, lead-free and RoHS compliant SO-8 surface mount package. It is designed to have excellent low-level gate drive characteristics and is suitable for a wide range of applications. The device features high power density, low conduction and switching losses, high efficiency, and simplified design and layout. The SI9424DY is ideal for use in a wide variety of Ethernet switch and firewall designs, as well as in portable, low-power, and automotive applications.

Application Field

The SI9424DY power MOSFET can be used in a wide range of industrial applications, including Ethernet switches, firewalls, power supplies, battery chargers, DC/DC converters, low-power motor drive circuits, and HVAC control circuits. This device is also highly suitable for use in portable, low-power, and automotive applications such as LED backlighting and DC/AC inverters.

The SI9424DY is capable of handling a wide range of currents, from 0.1A to 4A in a single package, making it ideal for high-power applications such as LED lighting and DC/AC inverters. It is designed to have a low on-resistance of as low as 0.1 ohms and can support up to 20 volts of gate-source voltage. In addition, the device features excellent drain-source resistance and very low gate charge. This makes it ideal for use in high efficiency applications and in power supplies, where it can provide high power density and reduced power losses.

Working Principle

The SI9424DY family of power MOSFETs are enhancement-mode devices with insulated gates. In this type of transistor, the channel between the drain and source is controlled by an insulated gate terminal connected to a voltage source. The majority charge carriers in the channel are electrons, so it is an n-channel device. The amount of current that can flow through the device is proportional to the voltage between the gate and source terminals. When the gate-to-source voltage is negative, the majority charge carriers will be repelled by the gate, resulting in no current flow. When the gate-to-source voltage is positive, the majority carriers will be attracted to the gate and a current will flow between the drain and source terminals.

The SI9424DY has a breakdown voltage of 20V, which is the maximum gate-to-source voltage without causing irreversible damage to the device. This makes it suitable for use in applications that operate at high voltages, such as automotive and industrial applications. In addition, the device has low gate charge and low on-resistance, making it suitable for use in high-efficiency applications such as LED lighting and DC/AC inverters.

The SI9424DY is a highly reliable, easily integrated, and cost-effective solution for a wide range of power electronics applications. Its small size and lead-free, RoHS compliant packaging make it an ideal choice for space-constrained applications. In addition, its excellent thermal conductivity allows for high power density, making it the ideal choice for high-current applications.

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