SI9434BDY-T1-GE3

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The SI9434BDY-T1-GE3 is a Single NMOSFET transistor, developed by Vishay Semiconductor. This device has been engineered specifically to provide increased power performance, improved signal integrity and enhanced reliability in a wide range of applications. This transistor is highly versatile, offering multiple benefits and features that make it suitable for a variety of uses.

The SI9434BDY-T1-GE3 is an NMOSFET with an area of 16 sq mm. It has an RDS (on) of 56 mΩ and an RDS (off) of 2.7 mΩ. The maximum drain current (ID) is 14.7 A and the maximum drain-source voltage (VDS) is 30 V. Additionally, this transistor is rated for storage temperatures between -65°C and +150°C. As such, it can be used in temperature-sensitive applications and environments.

The SI9434BDY-T1-GE3 provides a wide range of benefits and features to enhance performance in various applications. Its P-Channel MOSFET configuration allows for a low input current, low gate charge and low input capacitance. This ensures minimal power dissipation and improved switching performance. Furthermore, this device has an integrated substrate field plate, which reduces the Miller capacitance in high current applications. Additionally, this device offers a very low input resistance and low Qg, resulting in improved power efficiency in high frequency applications.

This transistor operates on the principle of MOSFETs, which are based upon current flow between a source and a drain through the action of a gate voltage. When a voltage is applied to a MOSFET, it is able to control the flow of current through the source and drain regions. By applying a positive gate voltage, a channel is formed between the source and drain regions, allowing current to flow through. Conversely, by applying a negative gate voltage, the channel is closed, effectively blocking current flow. This transistor is controlled using a simple single gate circuit and provides increased efficiency and superior performance compared to BJT transistors.

The SI9434BDY-T1-GE3 is suitable for a wide range of applications such as high frequency power amplifier circuits, audio processing, DC-DSC system, power supplies, DC to AC inverters, and general switching in automotive, industrial and consumer electronics. This device has been engineered to provide improved efficiency, enhanced signal integrity and improved reliability in these applications.

In summary, the SI9434BDY-T1-GE3 is a Single NMOSFET transistor developed by Vishay Semiconductor. This device has an area of 16 sq mm, an RDS (on) of 56 mΩ, an RDS (off) of 2.7 mΩ, a maximum drain current of 14.7 A and a maximum drain-source voltage of 30 V. It offers a wide range of benefits and features including a low input current, low gate charge and low input capacitance, and integrated substrate field plate. This device operates on the MOSFET principle and is suitable for a wide range of applications. It provides increased power performance, improved signal integrity and enhanced reliability in these applications.

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