STD100N3LF3 Allicdata Electronics
Allicdata Part #:

497-16197-2-ND

Manufacturer Part#:

STD100N3LF3

Price: $ 0.67
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 80A DPAK
More Detail: N-Channel 30V 80A (Tc) 110W (Tc) Surface Mount DPA...
DataSheet: STD100N3LF3 datasheetSTD100N3LF3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.67000
10 +: $ 0.64990
100 +: $ 0.63650
1000 +: $ 0.62310
10000 +: $ 0.60300
Stock 1000Can Ship Immediately
$ 0.67
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD100N3LF3 is a packaged power MOSFET transistor designed to provide superior performance and excellent thermal stability in a variety of applications. This transistor is a high-performance, high-power, single-channel, N-channel, depletion-mode, field-effect transistor (FET) that can be used for controlling larger currents. It is also capable of working in both low and high signal frequencies, making it suitable for a wide variety of applications. This transistor offers excellent performance at high temperatures.

The STD100N3LF3 is a highly efficient three-terminal device, which makes it suitable for use in applications requiring load switching, power amplification, and driving inductive loads. The linear high-side and low-side FETs of the device allow for precise voltage regulation and current levels with precise control. It also offers an extremely low on-state resistance when compared to other MOSFET transistors, making it an energy-efficient choice. The device is also capable of providing low gate drive, low gate-to-source capacitance, and low distortion.

The working principle of the STD100N3LF3 can be described as follows. This single-channel, N-channel, depletion-mode FET works by creating a strong electric field when voltage is applied to the gate terminal. This field causes the electrons in the conducting channel to repel each other and form a depletion region, creating a discontinuity in the material. This lets current flow between the two drain and source terminals while the gate voltage is adjusted to manage the resistance of the channel and control the flow of the current.

The STD100N3LF3 is suitable for a wide range of applications due to its high power handling capacity and excellent thermal stability. This device can be used for driving loads like motors and solenoids, switching and amplifying signals, and regulating voltage and current levels. It is suitable for use in automotive, industrial, and telecom applications. This device can also be used for audio power amplification, battery charging, and low-beam HID bulb control.

In conclusion, the STD100N3LF3 is a single-channel, N-channel, depletion-mode FET transistor that offers excellent performance and excellent thermal stability. This device uses the electric field created by applying voltage to the gate terminal to create a depletion region between the two drain and source terminals. This allows current to flow while the resistance of the channel is being controlled by the gate voltage. The device is suitable for a wide variety of applications, such as automotive, industrial, telecom, and audio power amplification.

The specific data is subject to PDF, and the above content is for reference

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