| Allicdata Part #: | 497-16198-5-ND |
| Manufacturer Part#: |
STD1NK80Z-1 |
| Price: | $ 0.94 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 800V 1A IPAK |
| More Detail: | N-Channel 800V 1A (Tc) 45W (Tc) Through Hole I-PAK |
| DataSheet: | STD1NK80Z-1 Datasheet/PDF |
| Quantity: | 2995 |
| 1 +: | $ 0.94000 |
| 10 +: | $ 0.91180 |
| 100 +: | $ 0.89300 |
| 1000 +: | $ 0.87420 |
| 10000 +: | $ 0.84600 |
| Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 160pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 16 Ohm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STD1NK80Z-1 is a P-Channel 80V, 0.18 Ohm, 5A, SuperMESH™ Power MOSFET designed to offer superior power dissipation, low gate charge and low on-state resistance. This device is suitable for use in a wide range of applications such as main power switch, lighting, and motor speed control.
The power MOSFET is a unique three-terminal active device, which can pass electrical signals in one direction, depending on the applied voltage between the gate and source terminals. It is an evolution of the field-effect transistor (FET), which is considered the backbone of modern day integrated circuit design, and provides ideal features for use in power applications.
The working principle of the STD1NK80Z-1 is based on a field effect principle. When a voltage is applied between the drain-source terminals, a small current flows, known as the on-state current. This is necessary to turn on the device and provide better operation. As the voltage applied to the gate terminal increases, the drain-source current also increases, resulting in an increase in power dissipation via Ohmic heating, thereby providing an increased power solution.
The drain-source on-state resistance of the STD1NK80Z-1 is relatively low, which ensures high efficiency of power transfer. The gate turn-on and turn-off times are very fast and the device can handle high switching frequency, making it suitable for use in high speed and high efficiency applications such as electric vehicle propulsion and home appliance control.
Due to its excellent features, the STD1NK80Z-1 is suitable for use in a wide range of application areas, including, but not limited to, consumer electronics, solar energy, electric vehicle propulsion, lighting, motor speed control, and medical power. It is also suitable for use in home appliance control, display backlighting and solid state drives. This device can be used in applications, which require load switch control and power conversion.
The STD1NK80Z-1 is an ideal solution for providing efficient, reliable and high performance power solutions, which in turn increases the life and performance of any product. It is a cost effective and reliable choice for various applications and can be integrated seamlessly into existing designs.
The specific data is subject to PDF, and the above content is for reference
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STD1NK80Z-1 Datasheet/PDF