STD100NH03LT4 Allicdata Electronics
Allicdata Part #:

STD100NH03LT4-ND

Manufacturer Part#:

STD100NH03LT4

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 60A DPAK
More Detail: N-Channel 30V 60A (Tc) 100W (Tc) Surface Mount DPA...
DataSheet: STD100NH03LT4 datasheetSTD100NH03LT4 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Series: STripFET™ III
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STD100NH03LT4 is a 100V d-MOSFET half-bridge device, optimized device for applications like DC/DC converters and inverters. It is designed to reduce conduction and switching losses, with an improved breakdown voltage immunity. This MOSFET is an ideal device for high voltage, high frequency switching applications.

The STD100NH03LT4 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor), which features a built-in gate charge pump. This allows the user to switch it on and off faster and increase the switching speed. The built-in gate charge pump also reduces switching losses as well as power dissipation, resulting in improved efficiency and dynamic performance.

The STD100NH03LT4 has a drain-source voltage of up to 100V and a drain current of 8A when operating temperature is -55°C to +150°C. It also has an impressive on-resistance of only 11mΩ which reduces power losses when the device is on. The device also offers very low output capacitance, which helps reduce power losses during switching.

The STD100NH03LT4 has low gate-to-source and gate-to-drain capacitances, so it can easily handle high switching frequencies. The device also features a low gate-charge, which helps reduce switching losses.

The STD100NH03LT4 offers a wide range of applications because of its capability to handle very high voltage and currents. It is well suited for use in DC/DC converters for low-voltage, high-current applications and it can also be used in inverters and motor controllers for high-voltage, low-current applications. It can also be used in rectifying applications such as high-frequency switching rectifiers and high-current, low-voltage applications.

The working principle of the STD100NH03LT4 is fairly straightforward. It utilizes a gate charge pump to switch the device on and off quickly. When the gate charge pump generates a voltage, it switches the device on and when it is interrupted, it switches the device off. This allows the device to quickly turn on and off in order to reduce losses.

Overall, the STD100NH03LT4 offers a wide range of features that make it well suited to many applications, such as DC/DC converters, inverters, motor controllers, rectifiers, and high-frequency switching applications. It is an ideal device for any situation where high voltage and/or currents are required.

The STD100NH03LT4 is a very versatile MOSFET device that offers excellent performance and efficiency. It is a great choice for many applications and is sure to provide the user with the efficiency and productivity they need.

The specific data is subject to PDF, and the above content is for reference

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