STD11N60M2-EP Allicdata Electronics
Allicdata Part #:

497-16936-2-ND

Manufacturer Part#:

STD11N60M2-EP

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: N-CHANNEL 600 V, 0.550 OHM TYP.,
More Detail: N-Channel 600V 7.5A (Tc) 85W (Tc) Surface Mount DP...
DataSheet: STD11N60M2-EP datasheetSTD11N60M2-EP Datasheet/PDF
Quantity: 1000
1 +: $ 0.46000
10 +: $ 0.44620
100 +: $ 0.43700
1000 +: $ 0.42780
10000 +: $ 0.41400
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
Series: MDmesh™ M2-EP
Rds On (Max) @ Id, Vgs: 595 mOhm @ 3.75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD11N60M2-EP is a transistor belonging to the category of Field Effect Transistors (FETs). This particular device is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) of the single type. It is primarily used for power applications which utilize low frequencies for switching operations.

At the heart of the STD11N60M2-EP is a delicate electronic structure. It is composed of four sections: source, gate, drain and the substrate. The source is responsible for providing electrons to the channel between the drain and the source, while the drain is used to collect the electrons after they have passed through the channel. The gate is a control element, which is used to regulate the flow of electrons. The substrate serves as an insulation layer which prevents the current from leaking out of the device.

When the STD11N60M2-EP is brought into operation, the gate is supplied with a voltage, which can be positive or negative. A positive voltage applied to the gate causes the transistor\'s body to become more positively charged, thus allowing electrons to flow through the channel from source to drain. Additionally, the increase in positive charge opposes the attraction of electrons from the source, and thus the current flow is further reduced. When a negative voltage is applied to the gate, the transistor\'s body becomes negatively charged and the opposite effect takes place: electrons are attracted to the source, and the current flow from source to drain is increased.

The primary application for the STD11N60M2-EP is switching operations at low frequencies. This is because the transition time for the device, from on to off and vice versa, is significantly shorter at low frequencies. Additionally, the threshold voltage at which an on-off transition occurs is much lower than at higher frequencies.

In addition to switching operations, the STD11N60M2-EP can also be used for other applications such as motor control, load control and power electronics. Due to its low threshold voltage, the device can be used in a variety of motor control applications, such as the commonly used bipolar motor control. Additionally, it can be used in power electronics applications where low thresholds are needed.

Overall, the STD11N60M2-EP is an ideal device for applications that require low frequency switching operations and low threshold voltage levels. Its four-section structure makes it well suited for a range of applications that require precise control, from motor control to power electronics.

The specific data is subject to PDF, and the above content is for reference

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