| Allicdata Part #: | 497-3153-2-ND |
| Manufacturer Part#: |
STD10NF10T4 |
| Price: | $ 0.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 100V 13A DPAK |
| More Detail: | N-Channel 100V 13A (Tc) 50W (Tc) Surface Mount DPA... |
| DataSheet: | STD10NF10T4 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.32000 |
| 10 +: | $ 0.31040 |
| 100 +: | $ 0.30400 |
| 1000 +: | $ 0.29760 |
| 10000 +: | $ 0.28800 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FETs, or field effect transistors, are one of the most versatile and useful electronic components in existence. A FET, or field-effect transistor, is a semiconductor device consisting of source, gate, and drain terminals. These devices can amplify or switch electronic signals and are used in a wide range of applications. The most common form of FETs is the MOSFET (metal-oxide-semiconductor field-effect-transistor), which is used in a variety of digital circuitry, such as logic gates, amplifiers, and switching circuits. The STD10NF10T4 is a type of MOSFET and has a great range of application and working principle.
The STD10NF10T4 MOSFET is a high-speed, low-power, low-dissipation, low-noise device. The device is available in both N-channel and P-channel configurations, and it is suitable for a wide range of applications. It features a low on-resistance RDSon and a fast switching operation, making it ideal for applications that require high speed and low power dissipation. Additionally, the device has good thermal stability, as well as good immunity to overvoltage conditions. The device can also be used in applications that require high frequency switching, such as power conversion, line-switching, motor control, and power management.
The working principle of the STD10NF10T4 MOSFET is simple. The device consists of source and drain terminals, which are connected to an external circuit. The gate terminal connects to the source and drain terminals, and the gate is used to control the voltage applied to the source and drain terminals. When a voltage is applied to the gate terminal, it acts like an insulator between the source and drain terminals, allowing a current to flow through them. The amount of current that can flow through the source and drain terminals can be controlled by varying the voltage applied to the gate terminal. This makes the STD10NF10T4 ideal for use in switched-mode applications, where precise control of the current is required.
The STD10NF10T4 MOSFET is a great choice for applications that require high speed, low power dissipation, and good thermal stability. It is used in a variety of applications such as power conversion, motor control, line-switching, and power management. It is also a great choice for applications that require precise control of current, such as logic gates, amplifiers, and switching circuits. The STD10NF10T4 is a versatile and reliable device that can be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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STD10NF10T4 Datasheet/PDF