| Allicdata Part #: | 497-13424-2-ND |
| Manufacturer Part#: |
STD10P6F6 |
| Price: | $ 0.55 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET P CH 60V 10A DPAKP-Channel 60V 10A (Tc) 35W... |
| More Detail: | N/A |
| DataSheet: |  STD10P6F6 Datasheet/PDF |
| Quantity: | 2500 |
| 1 +: | $ 0.55000 |
| 10 +: | $ 0.53350 |
| 100 +: | $ 0.52250 |
| 1000 +: | $ 0.51150 |
| 10000 +: | $ 0.49500 |
Specifications
| Series: | DeepGATE™, STripFET™ VI |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Power - Max: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 48V |
| FET Feature: | -- |
| Power Dissipation (Max): | 35W (Tc) |
| Operating Temperature: | 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DPAK |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Base Part Number: | -- |
Description
1. Description
These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
2. Features
1. Very low on-resistance
2. Very low gate charge
3. High avalanche ruggedness
4. Low gate drive power loss
3. Applications
Switching applications
4. Internal schematic diagram
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