| Allicdata Part #: | 497-12781-5-ND |
| Manufacturer Part#: |
STD10PF06-1 |
| Price: | $ 1.23 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET P-CH 60V 10A IPAK |
| More Detail: | P-Channel 60V 10A (Tc) 40W (Tc) Through Hole I-PAK |
| DataSheet: | STD10PF06-1 Datasheet/PDF |
| Quantity: | 691 |
| 1 +: | $ 1.23000 |
| 10 +: | $ 1.19310 |
| 100 +: | $ 1.16850 |
| 1000 +: | $ 1.14390 |
| 10000 +: | $ 1.10700 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 40W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 850pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 200 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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A MOSFET is a metal-oxide semiconductor field-effect transistor (MOSFET). It is an active semiconductor device used in a variety of applications including power conversion, switching, and signal amplification. The STD10PF06-1 is a single-pole MOSFET with a maximum drain-source on-resistance of 2 mOhms at 25 degrees Celsius. This MOSFET is designed to operate up to +85 degrees Celsius and is suitable for use in both high and low side configurations.
The STD10PF06-1 is a depletion-mode MOSFET, which means that it is normally on and the gate-source voltage must be reduced below the threshold voltage to turn it off. This MOSFET utilizes a semi-insulating substrate to minimize capacitive power losses and on-state losses due to subthreshold drain-source current. It also has a low gate-threshold voltage, allowing it to switch at a lower voltage.
The STD10PF06-1 application field includes power management, current-drive applications, memory and general-purpose switching. It is ideal for systems such as remote sensing, smart meters, home automation, audio amplifiers, and reverse polarity protection. The MOSFET is also suited for applications in automotive, industrial, and telecommunication systems requiring low on-resistance and high breakdown voltage.
The working principle of the STD10PF06-1 is that the transistor is operated using an electric field. An applied voltage when connected between the gate and source terminals causes a conductive channel to be formed between the drain and source terminals. Current flowing through this channel is controlled by the gate voltage. When the gate voltage is increased, the channel is widened and more current flows through the MOSFET, thus increasing the output current. When it is decreased, the channel narrows and the output current decreases.
For its low gate-threshold voltage and drain-source on-resistance at 25 degrees Celsius, the STD10PF06-1 is well suited for digital and analog circuits. This MOSFET can also be used in high temperature environments due to its improved thermal stability. The STD10PF06-1 is also available in surface-mount packages, making it suitable for more space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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STD10PF06-1 Datasheet/PDF