| Allicdata Part #: | STD110N02RT4G-VF01OSTR-ND |
| Manufacturer Part#: |
STD110N02RT4G-VF01 |
| Price: | $ 0.31 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 24V 32A DPAK |
| More Detail: | N-Channel 24V 32A (Ta) 1.5W (Ta), 110W (Tc) Surfac... |
| DataSheet: | STD110N02RT4G-VF01 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.31200 |
| 10 +: | $ 0.30264 |
| 100 +: | $ 0.29640 |
| 1000 +: | $ 0.29016 |
| 10000 +: | $ 0.28080 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta), 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3440pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 32A (Ta) |
| Drain to Source Voltage (Vdss): | 24V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STD110N02RT4G-VF01 is a N-Channel enhancement mode MOSFET. It is a kind of transistor used in a wide variety of electronic and electrical applications. This article will discuss the various application fields and working principles associated with this device.
The STD110N02RT4G-VF01 is mainly used in power management applications. It has a low on-resistance which can help reduce system power consumption. It can also be used as an efficient switch in many power-related circuits. It is especially suitable for low voltage and low power devices.
The STD110N02RT4G-VF01 can also be used in high switching-speed applications. It can switch faster than any other transistor available, which makes it ideal for high-speed circuits. It is also very small in size and can be easily mounted on PCBs.
The STD110N02RT4G-VF01 also has excellent temperature stability and wide supply voltage range. It can also be used to drive large loads or high frequency signals. This feature makes it useful in various motor control applications.
The working principle of the STD110N02RT4G-VF01 is quite simple. It is a type of Field Effect Transistor (FET) with a gate that is connected to a source and drain. When a voltage is applied to the gate, it will create an electric field between the source and drain, and this will cause electrons to flow between them.
The flow of electrons through the transistor is what powers the circuit. Depending on which way the electric field is established, it will either turn on and allow current to flow, or turn off and stop it. This makes it ideal for controlling the amount of power flowing through a circuit.
The STD110N02RT4G-VF01 is a very useful amplifier due to its superior performance. It provides high levels of accuracy and stability while its low power requirements mean that it can be used in many applications. It is also capable of supporting high current applications, allowing it to be used in applications where high currents are present.
In conclusion, the STD110N02RT4G-VF01 is a versatile N-Channel enhancement mode MOSFET which is used in a wide variety of applications. It has a low on-resistance which helps reduce system power consumption, can switch faster than any other transistor available, has excellent temperature stability, wide supply voltage range and can drive large loads or high frequency signals. Its working principle is quite simple and it is capable of providing high levels of accuracy and stability. All these features make this device ideal for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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STD110N02RT4G-VF01 Datasheet/PDF