
Allicdata Part #: | 497-16925-2-ND |
Manufacturer Part#: |
STD11N60DM2 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | N-CHANNEL 600 V, 0.26 OHM TYP., |
More Detail: | N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DP... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.55000 |
10 +: | $ 0.53350 |
100 +: | $ 0.52250 |
1000 +: | $ 0.51150 |
10000 +: | $ 0.49500 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 614pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 16.5nC @ 10V |
Series: | MDmesh™ DM2 |
Rds On (Max) @ Id, Vgs: | 420 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.The STD11N60DM2 is a power MOSFET and is widely used in areas such as industrial and consumer electronics. It is a Complementary Metal–Oxide– Semiconductor (CMOS) Field Effect Transistor (FET). The FET is a current-controlled, three layer, four-terminal device that acts as an electronic switch. It can be used to amplify or switch signals and currents. The FET is the most important active device used in analog and digital electric circuits. In general, it has two types of areas of application, switching applications and power-switching applications.
In switching applications, FETs are used to turn on and off signals in digital circuits. One of the most commonly used FETs for this application is the FET-CMOS. This FET has two transistors connected in series, which are controlled by the gate voltage. The gate voltage controls the flow of electrons through the channel, allowing for very fast switching times.
In power-switching applications, FETs are used to transfer current from one circuit to another. This can be done in digital circuits, analog circuits, or even with power supplies. FETs are used to control the amount of current that is allowed to flow through the different stages of a power supply. The power can be switched by changing the gate voltage, which causes the flow of electrons in the channel to change direction.
In terms of its working principle, the STD11N60DM2 is a Power Mosfet, which is a type of FET. It works by controlling the flow of electrons through its channel by altering the voltage on its gate. It uses a metal-oxide-semiconductor (MOS) layer between the source and drain of a transistor to control the flow of current. When the gate voltage is increased, the electrons are forced through the channel, which allows more current to flow. When the gate voltage is decreased, the electrons are hindered, reducing the amount of current that can flow.
The STD11N60DM2 power MOSFET is mainly used in high-voltage and low-noise electronic systems. It is capable of providing high-current density, high switching speeds, and low power dissipation. It can be used in many applications including lighting, motor drives, motor control, and power supply design. The device is available in various package styles, making it suitable for various applications and mounting configurations.
In conclusion, the STD11N60DM2 is a power MOSFET that is used in many different application fields. It is a current-controlled, three layer, four-terminal device that acts as an electronic switch and is capable of providing high-current density, high switching speeds, and low power dissipation. It is used in a variety of applications such as lighting, motor drives, motor control, and power supply design. With its availability in various package styles, the FET is suitable for various applications and mounting configurations.
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