STD11N65M2 Allicdata Electronics
Allicdata Part #:

497-15048-2-ND

Manufacturer Part#:

STD11N65M2

Price: $ 0.71
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 7A DPAK
More Detail: N-Channel 650V 7A (Tc) 85W (Tc) Surface Mount DPAK
DataSheet: STD11N65M2 datasheetSTD11N65M2 Datasheet/PDF
Quantity: 1000
1 +: $ 0.71000
10 +: $ 0.68870
100 +: $ 0.67450
1000 +: $ 0.66030
10000 +: $ 0.63900
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STD11N65M2 is a type of power MOSFET, a metal-oxide-semiconductor field-effect transistor, that can be used in a range of different applications. This type of MOSFET is specifically designed for power management and power distribution applications, as it is capable of swtiching high-current loads in a reliable, efficient way. The STD11N65M2 is a single-channel MOSFET, providing a convenient and reliable solution for switching high-power loads when used in the correct manner.

When it comes to the application field of the STD11N65M2, its high-power handling capabilities make it a great choice for various power management and power distribution circuits. This type of MOSFET can be used in automotive applications for power management, such as in circuits for power supplies, battery management, and lighting control. It can also be used in industrial settings for power distribution circuits, to control motor speed, or as an intermediate switching device in an automated industrial process. This versatile MOSFET can also be used in consumer electronics such as video game consoles, home automation, high-performance computers, and consumer audio systems.

The working principle of the STD11N65M2 is quite straightforward, and follows the same principles as any type of MOSFET. The main function of a MOSFET is to control the flow of current between two terminals. The source terminal, or gate, is connected to the drain terminal via an insulated metallic channel, called the gate oxide. When a voltage is applied to the gate terminal, it creates an electric field that attracts electrons to the gate, thus allowing current to flow between the source and drain terminals. When the voltage is removed, the electric field dissipates, which prevents the current from flowing.

In order to correctly utilize the STD11N65M2, it is important to understand the typical parameters associated with this MOSFET. The device has a gate threshold voltage of 7V, a drain-source on state resistance of 0.9 ohm, and a maximum continuous drain-source current of 11A. Additionally, the maximum power dissipation is 40W, and the maximum junction temperature is 125°C. It is important to pay attention to these parameters when designing a power management or power distribution circuit around the STD11N65M2, as exceeding any of these parameters can lead to damage to the device.

In conclusion, the STD11N65M2 is a single-channel power MOSFET that can be used in a variety of different applications. It is capable of switching high-current loads in an efficient and reliable manner, making it a popular choice for automotive, industrial, and consumer applications. It is important to understand the typical parameters associated with this device in order to correctly utilize it in a power management or power distribution circuit.

The specific data is subject to PDF, and the above content is for reference

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